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Phase formation sequence induced by deposition temperatures in Nb/Si multilayers

Published online by Cambridge University Press:  31 January 2011

Ming Zhang  and
W. K. Wang
Ming Zhang
Affiliation:
Department of Mechanic Engineering, Tsinghua University, Beijing 100083 and Institute of Physics, Academy of Sciences, 100080, China
W. K. Wang
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080China
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Abstract

The phase formation sequence in Nb/Si multilayers formed at different deposition temperatures was investigated by x-ray diffraction (XRD) and transmission electron microscopy (TEM). The amorphous phases were found to form in Nb/Si multilayers deposited at room temperature and 560 °C, but the compositions of these two amorphous phases were different. The crystalline Nb3Si and Nb5Si3 were formed in Nb/Si multilayers deposited at 180–500 °C. The interfacial energy and modified heat of formation are adopted to explain our obtained results. The occurrence of crystalline Nb5Si3, NbSi2, and amorphous silicide phase was found when the Nb/Si multilayers with Nb3Si phase were annealed at 550 °C, while only NbSi2 was found to form when annealing this sample at 700 °C. The mobility of Si takes an important role in phase formation in Nb/Si multilayers.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 5 , May 1998 , pp. 1373 - 1378
Copyright
Copyright © Materials Research Society 1998

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