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Parameter effect on the crystallization of Nd:yttrium aluminum garnet laser-ablated TiO2 thin film

Published online by Cambridge University Press:  31 January 2011

Mrinal Pal
Affiliation:
Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, Japan
Aiko Narazaki
Affiliation:
Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, Japan
Takeshi Sasaki
Affiliation:
Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, Japan
Naoto Koshizaki*
Affiliation:
Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, Japan
*
a) Address all correspondence to this author.
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Abstract

Process parameter dependency on the phase transition from anatase to rutile phase of laser-ablated TiO2 films was investigated. Lower ambient argon pressure, longer deposition time, higher laser fluence, and smaller target–substrate separation give rutile phase from anatase phase at comparatively lower temperature. The relationship between thickness and onset temperature of anatase–rutile transformation can be comprehensively explained in terms of film thickness. Thinner films have higher phase transition temperature. The presence of helium gas during deposition favors the anatase–rutile transition at a temperature lower than that expected from the above relationship.

Type
Articles
Copyright
Copyright © Materials Research Society 2001

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References

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