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Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures

Published online by Cambridge University Press:  31 January 2011

Weihuang Yang ,
Shuping Li ,
Hangyang Chen ,
Dayi Liu  and
Junyong Kang
Junyong Kang*
Affiliation:
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: jykang@xmu.edu.cn
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Abstract

The AlGaN-based ultraviolet (UV) light-emitting diode (LED) structures with AlN as buffer were grown on sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE). A series of cathodoluminescence (CL) spectra were measured from the cross section of the UV-LED structure using point-by-point sampling to investigate the origins of the broad parasitic emissions between 300 and 400 nm, and they were found to come from the n-type AlGaN and AlN layers rather than p-type AlGaN. The parasitic emissions were effectively suppressed by adding an n-type AlN as the hole-blocking layer. Electroluminescence (EL) and atomic force microscopy (AFM) measurements have revealed that the interface abruptness and crystalline quality of the UV-LED structure are essential for the achievement of the EL emissions from the multiple quantum wells (MQWs).

Keywords

NitrideEpitaxyLuminescence
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 6 , June 2010 , pp. 1037 - 1040
Copyright
Copyright © Materials Research Society 2010

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