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Orientation transformation of Pb grains in 5Sn–95Pb/ 63Sn–37Pb composite flip-chip solder joints during electromigration test

Published online by Cambridge University Press:  31 January 2011

Ying-Ta Chiu*
Affiliation:
Department of Materials Science and Engineering, and Frontier Material and Micro/Nano Science and Technology Center, National Cheng Kung University, Tainan 701, Taiwan
Kwang-Lung Lin
Affiliation:
Department of Materials Science and Engineering, and Frontier Material and Micro/Nano Science and Technology Center, National Cheng Kung University, Tainan 701, Taiwan
Yi-Shao Lai
Affiliation:
Central Labs, Advanced Semiconductor Engineering, Inc., Kaohsiung 811, Taiwan
*
a)Address all correspondence to this author. e-mail: yingta@mail.mse.ncku.edu.tw
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Abstract

Microstructural evolution occurred in 5Sn–95Pb/63Sn–37Pb composite flip-chip solder bump during electromigration. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) observations for 5Sn–95Pb/63Sn–37Pb composite flip-chip solder joints subjected to 5 kA/cm2 current stressing at 150 °C revealed a gradual orientation transformation of Pb grains from random textures toward (101) grains. We proposed that the combination of reducing the surface energy of Pb grain boundaries and resistance of the entire polycrystalline system are the driving force for the orientation transformation of Pb grains during an electromigration test.

Type
Articles
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Shukla, R., Murali, V.Bhansali, A.: Proceedings of 49th Electronic Components and Technology Conference,1999 945Google Scholar
2Mahajan, R., Brown, K.Atluri, V.: The evolution of microprocessor packaging. Intel Technol. J. Q3 2000Google Scholar
3Huang, A.T., Gusak, A.M., Tu, K.N.Lai, Y.S.: Thermomigration in SnPb composite flip chip solder joints. Appl. Phys. Lett. 88, 141911 2006CrossRefGoogle Scholar
4Huang, A.T., Tu, K.N.Lai, Y.S.: Effect of the combination of electromigration and thermomigration on phase migration and partial melting in flip chip composite SnPb solder joints. J. Appl. Phys. 100, 033512 2006Google Scholar
5Liu, Y.H.Lin, K.L.: Damages and microstructural variation of high-lead and eutectic SnPb composite flip chip solder bumps induced by electromigration. J. Mater. Res. 20(8), 2184 2005CrossRefGoogle Scholar
6Nah, J.W., Paik, K.W., Suh, J.O.Tu, K.N.: Mechanism of electromigration-induced failure in the 97Pb–3Sn and 37Pb–63Sn composite solder joints. J. Appl. Phys. 94, 7560 2003Google Scholar
7Lai, Y.S.Kao, C.L.: Electrothermal coupling analysis of current crowding and Joule heating in flip-chip packages. Microelectron. Reliab. 46, 1357 2006Google Scholar
8Telang, A.U., Bieler, T.R., Lucas, J.P., Subramanian, K.N., Lehman, L.P., Xing, Y.Cotts, E.J.: Grain-boundary character and grain growth in bulk Tin and bulk lead-free solder alloys. J. Electron. Mater. 33, 1412 2004CrossRefGoogle Scholar
9Rath, B.B., Winning, M.Li, J.C.M.: Coupling between grain growth and grain rotation. Appl. Phys. Lett. 90, 161915 2007CrossRefGoogle Scholar
10Wu, A.T., Gusak, A.M., Tu, K.N.Kao, C.R.: Electromigration-induced grain rotation in anisotropic conducting beta tin. Appl. Phys. Lett. 86, 241902 2005CrossRefGoogle Scholar
11Chou, C.K., Chen, C.A., Liang, S.W.Chen, C.: Redistribution of Pb-rich phase during electromigration in eutectic SnPb solder stripes. J. Appl. Phys. 99, 054502 2006CrossRefGoogle Scholar
12Magnaterra, A.: Structure factor and resistivity of copper and silver. Phys. Lett. A 44, 63 1973CrossRefGoogle Scholar
13Chen, K.C., Liao, C.N., Wu, W.W.Chen, L.J.: Direct observation of electromigration-induced surface atomic steps in Cu lines by in situ transmission electron microscopy. Appl. Phys. Lett. 90, 203101 2007Google Scholar
14Lykken, G.I., Geiger, A.L., Dy, K.S.Mitchell, E.N.: Measurement of the superconducting energy gap and Fermi velocity in single crystal lead films by electron tunneling. Phys. Rev. B 4, 5 1971Google Scholar
15Lloyd, J.R.: Electromigration induced resistance decrease in Sn conductors. J. Appl. Phys. 94, 6483 2003CrossRefGoogle Scholar