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Nucleation and growth of oriented diamond on Si(100) by bias-assisted chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Mikka Nishitani-Gamo ,
Toshihiro Ando ,
Kazuo Yamamoto ,
Paul A. Dennig  and
Yoichiro Sato
Mikka Nishitani-Gamo
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan; Core Research for Evolutional Science and Technology (CREST) of Japan Science and Technology Corporation (JST), c/o NIRIM, Japan; and Toppan Printing Co., Ltd., Materials Research Laboratory, 4-2-3, Takanodai-Minami, Sugito, Saitama 345, Japan
Toshihiro Ando
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan; and Core Research for Evolutional Science and Technology (CREST) of Japan Science and Technology Corporation (JST), c/o NIRIM, Japan
Kazuo Yamamoto
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan
Paul A. Dennig
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan
Yoichiro Sato
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan
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Abstract

In order to clarify the effect of bias treatments on the highly oriented growth of diamond, we investigated the relation between the silicon surface morphology changes after applying a bias voltage, and the orientation of the diamond crystallites after growth. We report two major findings. First, a textured structure on the Si surface after the bias pretreatment was found to be a necessary but insufficient indicator for the subsequent growth of highly oriented diamond. Second, although bias pretreatments effectively enhance nucleation, we did not find a clear relationship between the nucleation density and the percentage of oriented crystallites. The highest nucleation densities resulted in randomly oriented films. We conclude that bias pretreatments affect the nucleation enhancement and the diamond orientation through different mechanisms.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 5 , May 1997 , pp. 1351 - 1355
Copyright
Copyright © Materials Research Society 1997

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References

1.Jiang, X. and Klages, C-P., Diamond Relat. Mater. 2, 1112 (1993).CrossRefGoogle Scholar
2.Jiang, X., Klages, C-P., Zachai, R., Hartweg, M., and Füsser, H-J., Appl. Phys. Lett. 62, 3438 (1993).CrossRefGoogle Scholar
3.Maeda, H., Irie, M., Hino, T., Kusakabe, K., and Morooka, S., J. Mater. Res. 10, 158 (1995).CrossRefGoogle Scholar
4.Walter, S. D., Stoner, B. R., and Glass, J. T., Ellis, P. J., Buhaenko, D. S., Jenkins, C. E., and Southworth, P., Appl. Phys. Lett. 62, 1215 (1993).CrossRefGoogle Scholar
5.Schreck, M., Hessmer, R., Geiger, S., Rauschenbach, B., and Stritzker, B., Diamond Relat. Mater. 3. 510 (1994).CrossRefGoogle Scholar
6.Stöckel, R., Janischowsky, K., Rohmfeld, S., Ristein, J., Hundhausen, M., and Ley, L., Diamond Relat. Mater. 5, 321 (1996).CrossRefGoogle Scholar
7.Suzuki, T., Yagi, M., and Shibuki, K., Appl. Phys. Lett. 64, 557 (1994).CrossRefGoogle Scholar
8.Stoner, B. R. and Glass, J. T., Appl. Phys. Lett. 60, 698 (1992).CrossRefGoogle Scholar
9.Kawarada, H., Suesada, T., and Nagasawa, H., Appl. Phys. Lett. 66, 583 (1995).CrossRefGoogle Scholar
10.Yugo, S., Kanai, T., Kimura, T., and Muto, T., Appl. Phys. Lett. 58, 1036 (1991).CrossRefGoogle Scholar
11.Katoh, M., Aoki, M., and Kawarada, H., Jpn. J. Appl. Phys. 33, L194 (1994).CrossRefGoogle Scholar
12.Yugo, S., Kimura, T., and Kanai, T., Diamond Relat. Mater. 2, 328 (1992).CrossRefGoogle Scholar
13.Stoner, B. R., Ma, G. H., Wolter, S. D., Zhu, W., Wang, Y-C., Davis, R. F., and Glass, J. T., Diamond Relat. Mater. 2, 142 (1993).CrossRefGoogle Scholar
14.Beckmann, R., Sobisch, B., Kulisch, W., and Rau, C., Diamond Relat. Mater. 3, 555 (1994).CrossRefGoogle Scholar
15.Robertson, J., Gerber, J., Sattel, S., Weiler, M., Jung, K., and Ehrhardt, H., Appl. Phys. Lett. 66, 3287 (1995).CrossRefGoogle Scholar
16.Stoner, B. R., Ma, G-H. M., Walter, S. D., and Glass, J. T., Phys. Rev. B 45, 11 067 (1992).CrossRefGoogle Scholar
17.N.-Gamo, M., Ando, T., Watanabe, K., Sekita, M., Dennig, P. A., Yamamoto, K., and Sato, Y., Diamond Relat. Mater. (in press).Google Scholar
18.Maeda, H., Saito, T., Kusakabe, K., and Morooka, S., in Proceedings of the 2nd Korea–Japan Symposium on Advanced Materials (1996), p. 136.Google Scholar