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Nucleation and growth during the chemical vapor deposition of diamond on SiO2 substrates

Published online by Cambridge University Press:  03 March 2011

Janet Rankin ,
Rachel E. Boekenhauer ,
Roseann Csencsits ,
Yuzo Shigesato ,
Matthew W. Jacobson  and
Brian W. Sheldon
Janet Rankin
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
Rachel E. Boekenhauer
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
Roseann Csencsits
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
Yuzo Shigesato
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
Matthew W. Jacobson
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
Brian W. Sheldon
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
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Abstract

The early stages of microwave-plasma assisted CVD of diamond on fused silica and silicon substrates were investigated. Nucleation densities on fused silica were somewhat lower than on silicon; however, the diamond growth rates on fused silica were faster. These results suggest that the substrate alters the plasma chemistry near the substrate. Transmission electron microscopy showed a relatively smooth interface between the diamond grains and the SiO2 surface. At low nucleation densities, the growth kinetics on both substrates were linear (i.e., the average feature size was proportional to the deposition time), which indicates that the growth kinetics were initially controlled by reaction(s) at the growing diamond surfaces. The transition to nonlinear growth kinetics observed at higher nucleation densities was probably caused by mass-transport limits.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 8 , August 1994 , pp. 2164 - 2173
Copyright
Copyright © Materials Research Society 1994

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