Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-27T01:10:22.210Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural analysis of Pd-based ohmic contacts to p-type GaAs

Published online by Cambridge University Press:  08 February 2011

K.M. Schmitz ,
K.L. Jiao ,
R. Sharma ,
W.A. Anderson ,
G. Rajeswaran ,
L.R. Zheng ,
M.W. Cole  and
R.T. Lareau
K.M. Schmitz
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, New York 14260
K.L. Jiao
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, New York 14260
R. Sharma
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, New York 14260
W.A. Anderson
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, New York 14260
G. Rajeswaran
Affiliation:
Corporate Research Laboratory, Eastman Kodak Company, Rochester, New York 14650
L.R. Zheng
Affiliation:
Corporate Research Laboratory, Eastman Kodak Company, Rochester, New York 14650
M.W. Cole
Affiliation:
United States Army Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey 07703
R.T. Lareau
Affiliation:
United States Army Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey 07703
Get access

Abstract

As part of the investigation of the use of Pd-based ohmic contacts to p-type GaAs, cross-sectional transmission electron microscopy, Auger electron spectroscopy, and secondary ion mass spectroscopy were used to explore the uniformity at the metal/GaAs interface and its composition profile after ohmic contact formation. Comparisons were made among Au:Be, Au:Be/Pd, and Au/Pd contacts. Regions of p+ were formed in n-type GaAs by a spin-on source which was rapid diffused at 950 °C for 6 s or by ion implantation at a dose of 3 × 1014 atoms/cm2 at 150 keV for 15 min. Metallizations were accomplished by evaporation with a base pressure of 3 × 10−6 Torr. Sintering of the metallizations was done in a furnace at 350 °C for 15 min. Cross-sectional transmission electron microscope studies revealed an absence of spiking when Be is present in the metallization scheme but a broad band diffused into GaAs. An improper metal/GaAs adhesion was observed when Pd is absent. Be assists in confining the reaction of Pd with GaAs and acts as a diffusion barrier to the p+ dopant. Electrical measurements, taken from transmission line and cross bridge Kelvin resistors, were best for the Pd/Au:Be, which yielded a contact resistance of 0.3 μΩ-cm2.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 3 , March 1991 , pp. 553 - 559
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Schmitz, K. M., Jiao, K. L., Sharma, R., Anderson, W. A., Rajeswaran, G., Zheng, L. R., Cole, M. W., and Lareau, R. T., in Layered Structures: Heteroepitaxy, Superlattices, Strain, and Metastability, edited by Dodson, B. W., Schowalter, L. J., Cunningham, J. E., and Pollak, F. H. (Mater. Res. Soc. Symp. Proc. 160, Pittsburgh, PA, 1990).Google Scholar
2Tandon, T. L., Douglas, K. D., Vendura, G., Kolawa, E., So, F. C. T., and Nicolet, M., in Thin Films — Interfaces and Phenomena edited by Nemanich, R. J., Ho, P. S., and Lau, S. S. (Mater. Res. Soc. Symp. Proc. 54, Pittsburgh, PA, 1986).Google Scholar
3Sinha, A. K., Smith, T. E., and Livinstein, H. J., IEEE Trans. Electron Devices 22, 218 (1975).Google Scholar
4Brooks, R. C., Chen, C. L., Chu, A., Mahoney, L., Mavroides, J., Manfra, M., and Finn, M., Electron Device Lett. EDL-6, 525 (1985).CrossRefGoogle Scholar
5Malina, V., Vogel, K., and Zelinka, J., Semiconductor Science and Technology, 1015 (1988).CrossRefGoogle Scholar
6Reeves, G. K. and Harrison, H. B., IEEE Electron Device Lett. EDL3, 111 (1982).Google Scholar
7Chen, C. L., Hollis, M. A., Mahoney, L. J., Goodhue, W. D., Manfra, M. J., and Murphy, R. A., J. Vac. Technol. B 5, 902 (1987).Google Scholar
8Yu, L. S., Wang, L. C., Marshall, E. D., Lau, S. S., and Kuech, T. F., J. Appl. Phys. 65, 1621 (1989).Google Scholar