Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-24T03:05:56.840Z Has data issue: false hasContentIssue false
  • English
  • Français

Micropipes in Silicon Carbide Crystals: Do all Screw Dislocations have Open Cores?

Published online by Cambridge University Press:  31 January 2011

William M. Vetter  and
Michael Dudley
William M. Vetter
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, New York 11794-2275
Michael Dudley
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, New York 11794-2275
Get access

Abstract

Micropipes in a 6H–SiC semiconductor wafer were studied by scanning electron and atomic force microscopy. The screw dislocations intersecting the wafer's surface were located by etch pitting, and their Burgers vectors determined by x-ray topography. The etch pits were eroded into smooth craters by ion beam etching to expose levels of dislocation line from inside the sample's bulk. There a micropipe's diameter is distant from surface relaxation effects. Hollow cores (micropipes) were observed at the base of the craters whose screw dislocations had Burgers vectors of magnitude three multiples of the c-lattice parameter and higher. Screw dislocations with 1c and 2c Burgers vectors had no associated micropipes.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 15 , Issue 8 , August 2000 , pp. 1649 - 1652
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Larkin, D.J., MRS Bull. 22(3), 36 (1997).CrossRefGoogle Scholar
2.Choyke, W.J. and Pensl, G., MRS Bull. 22(3), 25 (1997).CrossRefGoogle Scholar
3.Dudley, M., Wang, S., Huang, W., Carter, C.H. Jr, Tsvetkov, V.F., and Fazi, C., J. Phys. D: Appl. Phys. 28, A63 (1995).CrossRefGoogle Scholar
4.Glass, R.C., Henshall, D., Tsvetkov, V.F., and Carter, C.H. Jr, MRS Bull. 22(3), 30 (1997).CrossRefGoogle Scholar
5.Neudeck, P.G. and Powell, J.A., IEEE Electron Device Lett. 15, 63 (1994).CrossRefGoogle Scholar
6.Frank, F.C., Acta Crystallogr. 4, 497 (1951).CrossRefGoogle Scholar
7.Cabrera, N. and Levine, M.M., Philos. Mag. 1, 450 (1956).CrossRefGoogle Scholar
8.Van Der Hoek, B., Van Der Eerden, J.P., and Bennema, P., J. Cryst. Growth, 56, 621 (1982).CrossRefGoogle Scholar
9.Liu, G-Z., Van Der Eerden, J.P., and Bennema, P., J. Cryst. Growth 58, 152 (1982).Google Scholar
10.Srolovitz, D.J. and Safran, S.A., Philos. Mag. A 52, 793 (1985).CrossRefGoogle Scholar
11.Tanaka, H., Uemura, Y., and Inomata, J., J. Cryst. Growth 53, 630 (1981).CrossRefGoogle Scholar
12.Dudley, M., Si, W., Wang, S., Carter, C. Jr, Glass, R., and Tsvetkov, V., Nuovo Cimento 19D, 153 (1997).CrossRefGoogle Scholar
13.Giocondi, J., Rohrer, G.S., Skowronski, M., Balakrishna, V., Augustine, G., Hobgood, H.M., and Hopkins, R.H., in III-Nitride, SiC, and Diamond Materials for Electronic Devices, edited by Gaskill, D.K., Brandt, C.D., and Nemanich, R.J. (Mater. Res. Soc. Symp. Proc. 423, Pittsburgh, PA, 1996), p. 539.Google Scholar
14.Giocondi, J., Rohrer, G.S., Skowronski, M., Balakrishna, V., Augustine, G., Hobgood, H.M., and Hopkins, R.H., J. Cryst. Growth 181, 351 (1997).CrossRefGoogle Scholar
15.Giocondi, J., Rohrer, G.S., Skowronski, M., Balakrishna, V., Augustine, G., Hobgood, H.M., and Hopkins, R.H., Mater. Sci. Forum 264–268, 371 (1998).CrossRefGoogle Scholar
16.Heindl, J., Dorsch, W., Eckstein, R., Hofmann, D., Marek, T., Müller, St. G., Strunk, H.P., and Winnacker, A., J. Cryst. Growth 179, 510 (1997).CrossRefGoogle Scholar
17.Amelinckx, S., Strumane, G., and Webb, W.W., J. Appl. Phys. 31, 1359 (1960).CrossRefGoogle Scholar