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Mg–Ti–spinel formation by interfacial solid-state reaction at the TiN/MgO interface

Published online by Cambridge University Press:  31 January 2011

L. Hultman ,
J-E. Sundgren  and
D. Hesse
L. Hultman
Affiliation:
Thin Film Group, Department of Physics, Linköping University S-581 83, Linköping, Sweden
J-E. Sundgren
Affiliation:
Thin Film Group, Department of Physics, Linköping University S-581 83, Linköping, Sweden
D. Hesse
Affiliation:
Institut für Festöorperphysik und Elektronenmikroskopie der Akademie der Wissenschaften der DDR, Weinberg 2, Halle (Saale), DDR-4050
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Abstract

Mg–Ti–spinel formation has been observed by cross-sectional transmission electron microscopy at the interface of TiN(100) films and MgO(100) substrates for films grown at substrate temperatures higher than 800 °C and for samples post-annealed at 850 °C. The TiN films were deposited by reactive magnetron sputtering onto cleaved (100)-oriented MgO substrates. The spinel formed 5 nm epitaxial layers along the interface with occasional (111) wedges growing into the MgO. The orientational relationships were found to be TiN(100)|spinel(100)|MgO(100) and TiN[001]|spinel[001]|MgO[001]. The spinel composition is suggested to be Mg2TiO4.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 5 , October 1989 , pp. 1266 - 1271
Copyright
Copyright © Materials Research Society 1989

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References

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