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Mechanisms of intrinsic stresses generation in sputtered amorphous Si: H films

Published online by Cambridge University Press:  03 March 2011

Hiroki Takahashi ,
Hirotoshi Nagata ,
Haruki Kataoka  and
Hiroshi Takai
Hiroki Takahashi
Affiliation:
Central Research Laboratories, Sumitomo Osaka Cement Co., Ltd., Toyotomi-cho 585, Funabashi-shi Chiba 274, Japan
Hirotoshi Nagata
Affiliation:
Central Research Laboratories, Sumitomo Osaka Cement Co., Ltd., Toyotomi-cho 585, Funabashi-shi Chiba 274, Japan
Haruki Kataoka
Affiliation:
Central Research Laboratories, Sumitomo Osaka Cement Co., Ltd., Toyotomi-cho 585, Funabashi-shi Chiba 274, Japan
Hiroshi Takai
Affiliation:
Department of Electrical Engineering, Tokyo Denki University, Kanda-Nishiki-cho 2-2. Chiyodaku, Tokyo 101, Japan
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Abstract

The relation between stresses of sputtered a-Si: H films and the film deposition conditions are investigated. The film stresses change from a large compressive stress of 1000 MPa to an almost stress-free one. They arise from distortions of the Si network via the following two mechanisms. The first results from the inclusion of the Ar-sputtering gas into the films, which provides volume expansion of the film network. The other is due to structural disorders, such as a deviation of the Si bond angle which is generated during the deposition processes. Moreover, it is found that Si–H terminations in the films contribute to reducing the film stresses because the Si–H termination breaks and relaxes the Si network. These effects can be realized as long as the Si–H terminations are homogeneously distributed in the films.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2736 - 2741
Copyright
Copyright © Materials Research Society 1995

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