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The Low-temperature Initial Oxidation Stages of Cu(100) Investigated by in situ Ultra-high-vacuum Transmission Electron Microscopy
Published online by Cambridge University Press: 01 July 2005
Abstract
The nucleation and growth of Cu2O islands due to Cu(100) oxidation at temperatures from 200 to 350 °C have been observed by in situ ultra-high-vacuum transmission electron microscopy. For this temperature range, epitaxial Cu2O islands form a triangular shape with rounded edges when Cu(100) is exposed to dry oxygen at 5 × 10−4 Torr in situ. Our initial analysis on the nucleation and growth of these three-dimensional Cu2O islands agrees well with the heteroepitaxial model of surface diffusion of oxygen.
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- Copyright © Materials Research Society 2005
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