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Light-induced defects in aluminum nitride ceramics

Published online by Cambridge University Press:  18 February 2016

J. H. Harris  and
R. A. Youngman
J. H. Harris
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio 44128
R. A. Youngman
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio 44128
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Extract

Aluminum nitride (AlN) ceramic samples exhibit a dramatic photo-darkening when exposed to UV radiation. In this paper, this phenomenon has been investigated utilizing photo-induced absorption measurements, where the transmission of a visible probe beam is monitored before and after exposure to a UV pump beam. Changes in the probe transmission as large 60% have been observed. The results of this study show that the center responsible for the photo-induced absorption process is an aluminum vacancy-oxygen impurity complex which resides in the AlN lattice. An energy level diagram is constructed which is consistent with these experimental findings.

Type
Research Article
Information
Journal of Materials Research , Volume 8 , Issue 1 , January 1993 , pp. 154 - 162
Copyright
Copyright © Materials Research Society 1993

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References

1. Slack, G.A., J. Phys. Chem. Solids 34, 321 (1973).Google Scholar
2. Harris, J. H., Youngman, R. A., and Teller, R. G., J. Mater. Res. 5, 1763 (1990).Google Scholar
3. Pastrnak, J. and Roskovcova, L., Phys. Status Solidi 26, 591 (1968).Google Scholar
4. Pastrnak, J., Pocesova, S., and Roskovcova, L., Czech. J. Phys. B24, 1149 (1974).Google Scholar
5. Pastrnak, J., Pocesova, S., Sanda, J., and Rose, J., Bull. Acad. Sci., USSR, Phys. Ser. 31, 123 (1973).Google Scholar
6. Harris, J. H. and Youngman, R. A., in Advanced Electronic Packaging Materials, edited by Barfknecht, A., Partridge, J., Chen, C. J., and Li, C-Y. (Mater. Res. Soc. Symp. Proc. 167, Pittsburgh, PA, 1990), p. 253.Google Scholar
7. Youngman, R. A. and Harris, J. H., J. Am. Ceram. Soc. 73, 3238 (1990).Google Scholar
8. Abeles, B., Phys. Rev. 131, 1906 (1963).Google Scholar
9. Denanot, M. F. and Rabier, J., J. Mater. Sci. 24, 1594 (1989).Google Scholar
10. Ratsifaritana, C. A. and Klemens, P. G., Int. J. Thermophysics 8, 737 (1987).Google Scholar
11. See, for example, Kuramoto, N., Taniguchi, H., and Aso, I., Adv. Ceram. 26, 107 (1989).Google Scholar
12. See, for example, Komeya, K., Inoue, H., and Tsuge, A., Yogyo-Kyokai-Shi 89, 58 (1981).Google Scholar
13. Huseby, I. C. and Bobik, C. F., U. S. Patent 4547471 (October 15, 1985).Google Scholar
14. Enck, R. C., Harris, R. D., and Youngman, R. A., Ceram. Trans. 5, 214 (1989).Google Scholar
15. Harris, J.H., in preparation.Google Scholar
16. See, for example, Pauling, L., The Nature of the Chemical Bond (Cornell University Press, Ithaca, NY, 1960).Google Scholar
17. As opposed to a scenario where the pump photon elevates carriers to a higher energy level, associated with a different defect, with subsequent thermal relaxation to the defect level probed in this experiment.Google Scholar