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Large-area quantification of BaCeO3 formation during processing of metalorganic-deposition-derived YBCO films

Published online by Cambridge University Press:  03 March 2011

D.E. Wesolowski  and
M.J. Cima
D.E. Wesolowski
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
M.J. Cima*
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
*
a) Address all correspondence to this author. e-mail: mjcima@mit.edu
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Abstract

A method is described for the quantification of BaCeO3 formation during the growth of YBa2Cu3O7–x (YBCO) films on CeO2 buffer layers. The method is based on the selective etching of BaCeO3 followed by inductively coupled plasma (ICP) excitation spectroscopy. A 10% HNO3 solution, at room temperature, dissolved BaCeO3 and YBCO in minutes but did not significantly etch CeO2 films. ICP excitation spectroscopy was used to quantify the extent of the reaction over macroscopic areas of film (∼1 cm2). BaCeO3 peak areas were measured by x-ray diffraction (XRD) and calibrated to the ICP excitation spectroscopy results. XRD and ICP excitation spectroscopy results indicated that BaCeO3 formation through a metalorganic deposition (MOD)-derived CeO2 layer follows the parabolic growth law. Almost the entire ceria cap layer was consumed by the growth of BaCeO3 after 2 h at 760 °C in the MOD process examined. BaCeO3 growth was substantially slower at 725 °C; only 25 ± 3% of the ceria layer reacted.

Keywords

DiffusionMetalorganic depositionSuperconducting
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 4 , April 2007 , pp. 1077 - 1081
Copyright
Copyright © Materials Research Society 2007

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