Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-07-01T17:00:32.562Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of TiC films synthesized by low energy ion bombardment

Published online by Cambridge University Press:  03 March 2011

Xiao-Ming He ,
Wen-Zhi Li  and
Heng-De Li
Xiao-Ming He
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Wen-Zhi Li
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Heng-De Li
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Get access

Abstract

Low energy bombardment of CHn+ at 100-800 eV has been used to prepare TiC film at room temperature by dual ion beam sputtering. The ion bombardment energies and densities obviously affect the metallographic morphology, the crystalline orientation, and constituent ratio of TiC films. TiC films formed under 200-600 eV CHn+ bombarding with 120-190 μA/cm2 possess much finer and compact microstructure in the compressive stress state. Its hardness is in the range of 2650-2880 kgf/mm2. The tribological tests indicate that TiC films synthesized on AISI 52100 steel by DIBS with low energy bombardment exhibit low friction coefficient and good wear resistance.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 9 , September 1994 , pp. 2355 - 2361
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Whang, K. and Seo, Y. W., J. Vac. Sci. Technol. A 11 (4), 1496 (1993).CrossRefGoogle Scholar
2Matthews, A., J. Vac. Sci. Technol. A 3 (6), 2354 (1985).CrossRefGoogle Scholar
3Jaulin, M., Laplanche, G., Delafond, J., and Pimbert-Michaux, S., Surf. Coating Technol. 37, 225 (1989).CrossRefGoogle Scholar
4Fominskii, V. Yu., Markeev, A. M., Nevolin, V. N., Prokopenko, V. B., and Yu, A., Triphonov, Vacuum 44 (3), 873 (1993).CrossRefGoogle Scholar
5Fatkin, J., Kohno, A., and Kanekama, N., Jpn. J. Appl. Phys. 26, 856 (1987).CrossRefGoogle Scholar
6Takano, I. and Tsobe, S., Thin Solid Films 171, 263 (1989).CrossRefGoogle Scholar
7He, X. M., Li, W. Z., Li, H. D., and Fan, Y. D., Nucl. Instrum. Methods B 82, 528 (1993).Google Scholar
8Torng, C. J., Sivertsen, J. M., Judy, J. H., and Chang, C., J. Mater. Res. 5, 2490 (1990).CrossRefGoogle Scholar
9Moyoshi, K. and Bucklay, D. H., Appl. Surf. Sci. 10, 537 (1982).Google Scholar
10Li, W. Z., He, X. M., and Li, H. D., J. Appl. Phys. 75 (4), (1994, in press).Google Scholar
11Ochsner, R., Kluge, A., Freg, L., and Ryssel, H., Nucl. Instrum. Methods B 59/60, 793 (1991).CrossRefGoogle Scholar
12Hioki, T., Itoh, Y., Itoh, A., Hibi, S., and Kawamoto, J., Surf. Coating Technol. 46, 233 (1991).CrossRefGoogle Scholar