Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-18T03:16:32.227Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of optical anisotropy of refractive-index-profiled porous silicon employing generalized ellipsometry

Published online by Cambridge University Press:  31 January 2011

S. Zangooie ,
R. Jansson  and
H. Arwin
S. Zangooie*
Affiliation:
Laboratory of Applied Optics, Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
R. Jansson
Affiliation:
Laboratory of Applied Optics, Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
H. Arwin
Affiliation:
Laboratory of Applied Optics, Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
*
a)Address all correspondence to this author. e-mail: shaza@ifm.liu.se
Get access

Abstract

Porosity depth profiles in porous silicon were realized by time modulation of the applied current density during electrochemical etching of crystalline silicon. The samples were investigated by variable angle spectroscopic ellipsometry. Using a basic optical model based on isotropy assumptions and the Bruggeman effective medium approximation, deviations from an ideal profile in terms of an interface roughness between the silicon substrate and the porous silicon layer and a compositional gradient normal to the surface were revealed. Furthermore, optical anisotropy of the sample was investigated by generalized ellipsometry. The anisotropy was found to be uniaxial with the optic axis tilted from surface normal by about 25°. The material was also found to exhibit positive birefringence.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 11 , November 1999 , pp. 4167 - 4175
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).CrossRefGoogle Scholar
2.Halimaoui, A., Oules, C., Bomchil, G., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M., and Muller, F., Appl. Phys. Lett. 59, 304 (1991).CrossRefGoogle Scholar
3.Smith, R.L. and Collins, S.D., J. Appl. Phys. 71, R1 (1992).CrossRefGoogle Scholar
4.Zangooie, S., Jansson, R., and Arwin, H., J. Vac. Sci. Technol. A 16, 2901 (1998).CrossRefGoogle Scholar
5.Setzu, S., Lérondel, G., and Romestain, R., J. Appl. Phys. 84, 3129 (1998).CrossRefGoogle Scholar
6.Berger, M.G., Arens-Fischer, R., Frohnhoff, S.T., Dieker, C., Winz, K., Münder, H., Lüth, H., Arntzen, M., and Theiss, W., in Microcrystalline and Neurocrystalline Semiconductors, edited by Brus, L., Itirose, M., Collins, R.W., Koch, F., and Tsai, C.C. (Mater. Res. Soc. Symp. Proc. 358, Pittsburgh, PA, 1995) p. 327.Google Scholar
7.Pellegrini, V., Tredicucci, A., Mazzoleni, C., and Pavesia, L., Phys. Rev. B 52, 328 (1995).Google Scholar
8.Thönissen, M., Berger, M.G., Krüger, M., Billat, S., Arens-Fischer, R., Glück, O., Lüth, H., Hilbrich, S., Theiss, W., and Grosse, P., in Microporous and Macroporous Materials, edited by Lobo, R.F., Beck, J.S., Suib, S.L., Corbin, D.R., Davis, M.E., Iton, L.E., and Zones, S.I.. (Mater. Res. Soc. Symp. Proc. 431, Pittsburgh, PA, 1996) p. 373.Google Scholar
9.Zangooie, S., Jansson, R., and Arwin, H., J. Appl. Phys. 86, 850 (1999).CrossRefGoogle Scholar
10.Pavesi, L. and Dubos, P., Semicond. Sci. Technol. 12, 570 (1997).CrossRefGoogle Scholar
11.Mazzoleni, C. and Pavesi, L., Appl. Phys. Lett. 67, 2983 (1995).CrossRefGoogle Scholar
12.Berger, M.G., Thönissen, M., Arens-Fischer, R., Münder, H., Lüth, H., Arntzen, M., and Theiβ, W., Thin Solid Films 255, 313 (1995).CrossRefGoogle Scholar
13.Fronhoff, S. and Berger, M.G., Adv. Mater. 12, 963 (1994).CrossRefGoogle Scholar
14.Loni, A., Canham, L.T., Berger, M.G., Arens-Fischer, R., Münder, H., Lüth, H., Arnand, H.F., and Benson, T.M., Thin Solid Films 276, 143 (1996).CrossRefGoogle Scholar
15.Zangooie, S., Bjorklund, R., and Arwin, H., Sens. Actuators, B 43, 168 (1997).CrossRefGoogle Scholar
16.Laurell, T., Drott, J., Rosengren, L., and Lindström, K., Sens. Actuators, B 31, 161 (1996).CrossRefGoogle Scholar
17.Janshoff, A., Dancil, K.S., Steinem, C., Greiner, D.P., Lin, V.S-Y., Gurtner, C., Motesharei, K., Sailor, M.J., and Ghadiri, M.R., J. Am. Chem. Soc. 120, 12108 (1998).CrossRefGoogle Scholar
18.Zangooie, S., Jansson, R., and Arwin, H., Appl. Surf. Sci. 136, 123 (1998).CrossRefGoogle Scholar
19.Zangooie, S., Bjorklund, R., and Arwin, H., Thin Solid Films 313–314, 827 (1998).Google Scholar
20.Zangooie, S., Bjorklund, R., and Arwin, H., J. Electrochem. Soc. 144, 4027 (1997).CrossRefGoogle Scholar
21.Azzam, R.M.A and Bashara, N.M., J. Opt. Soc. Am. 64, 128 (1974).CrossRefGoogle Scholar
22.Schubert, M., Phys. Rev. B 53, 4265 (1996).CrossRefGoogle Scholar
23.Schubert, M., Rheinländer, B., Woollam, J.A., Johs, B., and Herzinger, C.M., J. Opt. Soc. Am. A 13, 875 (1996).CrossRefGoogle Scholar
24.Schubert, M., Rheinländer, B., Cramer, C., Schmiedel, H., Woollam, J.A., Herzinger, C.M., and Johs, B., J. Opt. Soc. Am. A 13, 1930 (1996).CrossRefGoogle Scholar
25.Schubert, M., Thin Solid Films 313–314, 323 (1998).CrossRefGoogle Scholar
26.Zangooie, S., Jansson, R., and Arwin, H., in Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices—1999, edited by Branz, H.M., Collins, R.W., Okamoto, H., Guha, S., and Schropp, R. (Mater. Res. Soc. Symp. Proc. 557, Warrendale, PA, in press).Google Scholar
27.Azzam, R.M.A and Bashara, N.M., Ellipsometry and Polarized Light (North-Holland, New York, 1997).Google Scholar
28.Herino, R., Bomchil, G., Barla, K., Bertrand, C., and Ginoux, J.L., J. Electrochem. Soc. 134, 1994 (1987).CrossRefGoogle Scholar
29.Lang, W., Steiner, P., and Sandmaier, H., Sens. Actuators, A 51, 31 (1995).CrossRefGoogle Scholar
30.Unno, H., Imai, K., and Muramoto, S., J. Electrochem. Soc. 134, 645 (1987).CrossRefGoogle Scholar
31.Buttard, D., Bellet, D., and Baumbach, T., Thin Solid Films 276, 69 (1996).CrossRefGoogle Scholar
32.Berger, M.G., Dieker, C., Thönissen, M., Vescant, L., Lüth, H., Münder, H., Theiβ, W., Wernke, M., and Grosse, P., J. Phys. D: Appl. Phys. 27, 1333 (1994).CrossRefGoogle Scholar
33.Berger, M.G., Arens-Fischer, R., Thönissen, M., Krüger, M., Billat, S., Lüth, H., Hilbrich, S., Theiβ, W., and Grosse, P., Thin Solid Films 297, 237 (1997).CrossRefGoogle Scholar
34.Billat, S., Thönissen, M., Arens-Fischer, R., Berger, M.G., Krüger, M., and Lüth, H., Thin Solid Films 297, 22 (1997).CrossRefGoogle Scholar
35.Thönissen, M., Berger, M.G., Billat, S., Arens-Fischer, R., Krüger, M., Lüth, H., Theiβ, W., Hillbrich, S., Grosse, P., Lorendel, G., and Frotscher, U., Thin Solid Films 297, 92 (1997).CrossRefGoogle Scholar
36.Cullis, A.G. and Canham, L.T., Nature 353, 335 (1991).CrossRefGoogle Scholar