Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-06-24T05:02:34.610Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

C. H. Lin ,
R. J. Hwu  and
L. P. Sadwick
C. H. Lin
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
R. J. Hwu
Affiliation:
Department of Materials Science and Engineering, and Department of Electrical Engineering, University of Utah, Salt Lake City, Utah 84112
L. P. Sadwick
Affiliation:
Department of Materials Science and Engineering, and Department of Electrical Engineering, University of Utah, Salt Lake City, Utah 84112
Get access

Abstract

Single-crystal thulium phosphide (TmP) was grown heteroepitaxially on (001) GaAs substrates by molecular beam epitaxy with the orientation relationship [100]TmP//[100]GaAs and {001}TmP//{001}GaAs. The crystal properties and the defects in TmP/GaAs, GaAs/TmP/GaAs heterostructure were characterized through x-ray diffraction, atomic force microscopy, and transmission electron microscopy. TmP was found to have a huge difference in thermal expansion coefficient compared GaAs, which produced high tensile residual stress and may result in the formation of defects. The major defects in the top GaAs layer are stacking faults or microtwins, and they directly correlated with the islandlike surface morphology of the GaAs overlayer. The composition profiles of the TmP/GaAs heterostructure were measured by secondary ion mass spectrometry. The reason for surface segregation of Tm and Ga atoms is discussed and is primarily due to their higher diffusion coefficient near the surface as compared to that in the TmP epilayer bulk. The thermally stable characters of the TmP/GaAs heterostructures allow them to be promising candidates in various device applications.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 11 , November 2001 , pp. 3266 - 3273
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Palstr⊘m, C.J., Garrison, K.C., Mounier, S., Sands, T., Schwartz, C.L., Tabatabaie, N., Allen, S.J. Jr, Gilchrist, H.L., and Miceli, P.F., J. Vac. Sci. Technol. B 7, 747 (1989).Google Scholar
2.Corre, A.L., Guenais, B., Guivarc’h, A., Lecrosnier, D., Caulet, J., Minier, M., Ropars, G., Badoz, P.A., and Duboz, J.Y., J. Cryst. Growth 105, 234 (1990).Google Scholar
3.Richter, H.J., Smith, R.S., Herres, N., Seelmann-Eggebert, M., and Wenekors, P., Appl. Phys. Lett. 53, 99 (1988).Google Scholar
4.Lee, P.P., Hwu, R.J., Sadwick, L.P., Balasubramaniam, H., Kumar, B.R., Alvis, R., Lareau, R.T., and Wood, M.C., J. Electron. Mater. 27, 405 (1998).CrossRefGoogle Scholar
5.Lin, C.H., Hwu, R.J., Sadwick, L.P., and Heo, D. (unpublished).Google Scholar
6.Moffatt, W.G., The Handbook of Binary Phase Diagrams (Genium, Schenectady, New York, 1984);Google Scholar
Shunk, F.A., Constitution of Binary Alloys, 2nd suppl. (McGraw-Hill, New York, 1969);Google Scholar
Elliot, R.P., Constitution of Binary Alloys, 1st suppl. (McGraw-Hill, New York, 1965);Google Scholar
Hansen, M., Constitution of Binary Alloys (McGraw-Hill, New York, 1958).Google Scholar
7.Lin, C.H., Hwu, R.J., Sadwick, L.P., and Heo, D. (unpublished).Google Scholar
8.Patel, A.R. and Arora, S.K., J. Phys. D 7, 2301 (1974).Google Scholar
9.Desai, C.C., Rai, J.L., and Hanchinal, A.N., Surf. Technol. 21, 67 (1984).CrossRefGoogle Scholar
10.Ejima, T., Robinson, W.H., and Hirth, J.P., J.Cryst. Growth 7, 155 (1970).CrossRefGoogle Scholar
11.Soga, T., Hattori, S., Sakai, S., Takeyasu, M., and Umeno, M., J. Appl. Phys. 57, 4578 (1985).Google Scholar
12.Biegelsen, D.K., Ponce, F.A., Smith, A.J., and Tramontana, J.C., J. Appl. Phys. 61, 1856 (1987).Google Scholar
13.Ernst, F. and Pirouz, P., J. Appl. Phys. 64, 4526 (1988).CrossRefGoogle Scholar
14.Bennett, M.R., Singer, K.E., Wright, A.C., and Zaafri, Z.H., in Rare-Earth-Doped Semiconductors II, edited by Coffa, S., Polman, A., and Schwartz, R.N. (Mater. Res. Soc. Symp. Proc. 422, Pittsburgh, PA, 1996), p. 29.Google Scholar
15.Wood, C.E.C., Desimone, D., Singer, K., and Wicks, G.W., J. Appl. Phys. 53, 4230 (1982).Google Scholar
16.Rockett, A., Drummond, T.J., Greene, J.E., and Morkoc, H., J. Appl. Phys. 53, 7085 (1982).CrossRefGoogle Scholar
17.Ota, Y., J. Appl. Phys. 51, 1102 (1980).Google Scholar
18.Tabe, M. and Kajiyama, K., Jpn. J. Appl. Phys. 22, 423 (1983).CrossRefGoogle Scholar
19.Barnett, S.A. and Greene, J.E., Surf. Sci. 151, 67 (1985).Google Scholar
20.Andrieu, S., Arnaud d’Avitaya, F., and Pfister, J.C., J. Appl. Phys. 65, 2681 (1989).Google Scholar