Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T17:24:25.027Z Has data issue: false hasContentIssue false
  • English
  • Français

The interfacial structure and composition of diamond films grown on various substrates

Published online by Cambridge University Press:  29 June 2016

C. P. Sung  and
H. C. Shih
C. P. Sung
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, Republic of China
H. C. Shih
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, Republic of China
Get access

Abstract

Diamond thin films have been successfully grown on monocrystalline Si and various polycrystalline substrates, such as Mo, Nb, Zr, Cu, SiC, SiOx2, and WC, by microwave plasma CVD in gas mixtures of methane and hydrogen. For instance, high purity and dense diamond films can be deposited on structurally matched substrates of Si and SiC, in hydrogen containing 0.2% methane. SEM, TEM, XRD, AES, EELS, EDS, and Raman spectroscopy have been utilized to study and characterize the morphology, microstructure, and composition of the deposited films. Results indicate that tetrakaidecahedra are the dominant forms of crystalline diamond. Both {100} and {111} facets were observed on all substrates studied. SiC, SiOx, amorphous carbon, and carbides of refractory metals were the dominant interphases in this study. The composition and microstructure of the interphase appear to have significant effects on the adhesion strength, as shown in the diamond/Mo and diamond/Hf systems. Structural defects such as twins and stacking faults were frequently observed inside the diamond grains, while line defects of dislocations were mainly constrained to the grain boundaries. The diamond nucleation rate could be increased by first modifying the surface of the substrate material using a process that ultrasonically stimulated cavitation-erosion in an aqueous suspension of diamond dust. The diamond crystallites growing on this roughened surface were of a much more uniform size than was achieved after the more conventional lapping process.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 1 , January 1992 , pp. 105 - 116
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Matsumoto, S., Sato, Y., Tsutsumi, M., and Setaka, N., J. Mater. Sci. 17, 3106 (1982).Google Scholar
2.Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., J. Cryst. Growth 62, 642 (1983).Google Scholar
3.Sawabe, A. and Inuzuka, T., Appl. Phys. Lett. 46, 146 (1985).Google Scholar
4.Suzuki, K., Sawabe, A., Yasuda, H., and Inuzuka, T., Appl. Phys. Lett. 50, 728 (1987).Google Scholar
5.Chang, C. P., Flamm, D. L., Ibbotson, D. E., and Mucha, J. A., J. Appl. Phys. 63, 1744 (1988).Google Scholar
6.Celii, F. G., Pehrsson, P. E., Wang, H. T., and Butler, J. E., Appl. Phys. Lett. 52, 2043 (1988).CrossRefGoogle Scholar
7.Angus, J. C. and Hayman, C. C., Science 241, 913 (1988).CrossRefGoogle Scholar
8.Derijaguin, B. V., Spitsyn, B. V., Gorodetsky, A. E., Zakhorov, A. P., Bouilov, L. I., and Aleksenko, A. E., J. Cryst. Growth 31, 44 (1975).Google Scholar
9.Nakazawa, H., Kanazawa, Y., Kamo, M., and Osumi, K., Thin Solid Films 151, 199 (1987).Google Scholar
10.Yoshikawa, M., Ishida, H., Ishitani, A., Murakami, T., Koizumi, S., and Inuzuka, T., Appl. Phys. Lett. 57, 428 (1990).Google Scholar
11.Koizumi, S., Murakami, T., Inuzuka, T., and Suzuki, K., Appl. Phys. Lett. 57, 563 (1990).CrossRefGoogle Scholar
12.Sung, C. P., Tang, Y. S., Hwang, J. C., and Shih, H. C., Chin. J. Mater. Sci. 22, 273 (1990).Google Scholar
13.Shih, H. C., Sung, C. P., and Tang, Y. S., J. Chin. Inst. Eng. 13, 697 (1990).Google Scholar
14.Shih, H. C., Sung, C. P., Tang, Y. S., and Chen, J. G., Surf. Coat. Technol. (in press).Google Scholar
15.Sato, Y. and Kamo, M., Surf. Coat. Technol. 39/40, 183 (1989).Google Scholar
16.Walmsley, J. C. and Lang, A. R., J. Mater. Sci. Lett. 2, 785 (1983).Google Scholar
17.Matsumoto, S. and Matsui, Y., J. Mater. Sci. 18, 1785 (1983).Google Scholar
18.Zhu, W., Badzian, A. R., and Messier, R., J. Mater. Res. 4, 659 (1989).Google Scholar
19.Williams, B. E. and Glass, J. T., J. Mater. Res. 4, 373 (1989).CrossRefGoogle Scholar
20.Humble, P., Mackenzie, J. K., and Olsen, A., Philos. Mag. 52, 605 (1985).Google Scholar
21.Tsai, H. C. and Bogy, D. B., J. Vac. Sci. Technol. A 5, 3287 (1987).Google Scholar
22.Zaluzec, N. J., Ultramicroscopy 9, 319 (1982).Google Scholar
23.Fink, J., Müller-Heinzerling, T., Pfluger, J., Bubenzer, A., Koidl, P., and Crecelius, C., Solid State Commun. 47, 687 (1983).Google Scholar
24.Kawato, T. and Kondo, K., Jpn. J. Appl. Phys. 26, 1429 (1987).Google Scholar
25.Mucha, J. A., Flamm, D. L., and Ibbotson, D. E., J. Appl. Phys. 65, 3448 (1989).Google Scholar
26.Luries, P. G. and Wilson, J. M., Surf. Sci. 65, 476 (1977).Google Scholar
27.Mirtich, M. J., Swec, D. M., and Angus, J. C., Thin Solid Films 131, 245 (1985).Google Scholar