Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-22T00:33:08.243Z Has data issue: false hasContentIssue false

Interfacial adhesion and toughness of nanostructured diamond coatings

Published online by Cambridge University Press:  31 January 2011

Neeta Toprani
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB), Birmingham, Alabama 35294-1170
Shane A. Catledge
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB), Birmingham, Alabama 35294-1170
Yogesh K. Vohra
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB), Birmingham, Alabama 35294-1170
Raymond Thompson
Affiliation:
Department of Materials and Mechanical Engineering, University of Alabama at Birmingham (UAB), Birmingham, Alabama 35294-4460
Get access

Abstract

Microwave plasma chemical vapor deposition was used to deposit ultrasmooth nanostructured diamond films (roughness of 14 nm) on a titanium alloy (Ti–6Al–4V) by employing a feedgas mixture containing a high methane fraction (15% by volume) in nitrogen and hydrogen. Of particular interest in this study is the exceptional adhesion of the 4-μm-thick diamond coatings to the metal substrates as observed by indentation testing up to 150 kg load with a 1/8-in.-diameter tungsten carbide ball. No film delamination was observed up to 150 kg indentation load for each of 5 samples grown under the same processing conditions. Scanning electron microscopy of the film surrounding the indentations revealed circumferential microcracking beginning at loads ranging from 60 kg to as high as 150 kg. The strain to cause film microcracking was estimated from calculations of indentation surface areas to be as high as 1.9 ± 0.2%, which represents a significant improvement in toughness over other ceramic coatings.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Gruen, D.M., Liu, S., Krauss, A.R., Luo, J., and Pan, X., Appl. Phys. Lett. 64, 1502 (1994).Google Scholar
2.Zhou, D., McCauley, T.G., Qin, L.C., Krauss, A.R., and Gruen, D.M., J. Appl. Phys. 83, 540 (1998).CrossRefGoogle Scholar
3.Zhou, D., Krauss, A.R., Qin, L.C., McCauley, T.G., Gruen, D.M., Corrigan, T.D., Chang, R.P.H, and Gnaser, H., J. Appl. Phys. 82, 4546 (1997).CrossRefGoogle Scholar
4.Catledge, S.A. and Vohra, Y.K., J. Appl. Phys. 84, 6469 (1998).Google Scholar
5.Catledge, S.A. and Vohra, Y.K., J. Appl. Phys. 86, 698 (1999).CrossRefGoogle Scholar
6.Catledge, S.A., Comer, W., and Vohra, Y.K., Appl. Phys. Lett. 73, 181 (1998).Google Scholar
7.Ager, J.W. and Drory, M.D., Phys. Rev. B 48, 2601 (1993).Google Scholar
8.Veprek, S., J. Vac. Sci. Technol., A 17, 2401 (1999).CrossRefGoogle Scholar
9.Voevodin, A.A. and Zabinski, J.S., J. Mater. Sci. 33, 319 (1998).Google Scholar