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Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC

Published online by Cambridge University Press:  03 March 2011

J. Gubicza ,
S. Nauyoks ,
L. Balogh ,
J. Labar ,
T.W. Zerda  and
T. Ungár
J. Gubicza
Affiliation:
Department of Materials Physics, Eötvös Loránd University, H-1518 Budapest, Hungary
S. Nauyoks
Affiliation:
Department of Physics and Astronomy, Texas Christian University, Fort Worth, TX 76129
L. Balogh
Affiliation:
Department of Materials Physics, Eötvös Loránd University, H-1518 Budapest, Hungary
J. Labar
Affiliation:
Department of Materials Physics, Eötvös Loránd University, H-1518 Budapest, Hungary; and Research Institute for Technical Physics and Materials Science, H-1525 Budapest, Hungary
T.W. Zerda*
Affiliation:
Department of Physics and Astronomy, Texas Christian University, Fort Worth, TX 76129
T. Ungár
Affiliation:
Department of Materials Physics, Eötvös Loránd University, H-1518 Budapest, Hungary
*
a) Address all correspondence to this author. e-mail: t.zerda@tcu.edu
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Abstract

Microstructure of sintered nanocrystalline SiC is studied by x-ray line profile analysis and transmission electron microscopy. The lattice defect structure and the crystallite size are determined as a function of pressure between 2 and 5.5 GPa for different sintering temperatures in the range from 1400 to 1800 °C. At a constant sintering temperature, the increase of pressure promotes crystallite growth. At 1800 °C when the pressure reaches 8 GPa, the increase of the crystallite size is impeded. The grain growth during sintering is accompanied by a decrease in the population of planar faults and an increase in the density of dislocations. A critical crystallite size above which dislocations are more abundant than planar defects is suggested.

Keywords

DefectsNanostructureX-ray diffraction (XRD)
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1314 - 1321
Copyright
Copyright © Materials Research Society 2007

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References

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