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Influence of oxygen deficiency on the out-of-plane tilt of epitaxial Y2O3 films on Ni–5%W tapes

Published online by Cambridge University Press:  31 January 2011

C. Cantoni ,
E.D. Specht ,
A. Goyal ,
X. Li  and
M. Rupich
A. Goyal*
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
M. Rupich
Affiliation:
American Superconductor Corporation, Westborough, Massachusetts 01581
*
a) Address all correspondence to this author. e-mail: cantonic@ornl.gov
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Abstract

We analyzed the crystallographic c-axis tilt of (001) Y2O3 films grown on biaxially textured Ni–5%W tapes under different oxygen flux conditions. Results show that different tilting mechanisms were effective in films with different oxygen stoichiometry. Moreover, the structure of the film/substrate interface investigated by transmission electron microscopy, and the residual strain of the film investigated by x-ray diffraction were also dependent on the film oxygen content. Although the oxygen stoichiometric Y2O3 sample exhibited a coherent film/substrate interface and the sharpest out-of-plane texture, the films grown under reduced oxygen pressure exhibited a smaller overall c-axis tilt due to formation of interface dislocations and regions in which the film oxygen vacancies ordered to form a lattice superstructure.

Keywords

Nucleation & growthTransmission electron microscopy (TEM)X-ray diffraction (XRD)
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 2 , February 2009 , pp. 520 - 525
Copyright
Copyright © Materials Research Society 2009

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References

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