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Indium oxide/indium iron oxide thin films for photoelectrochemical hydrogen production with a-silicon solar cells

Published online by Cambridge University Press:  31 January 2011

William B. Ingler Jr.  and
Abbasali Naseem
Abbasali Naseem
Affiliation:
University of Toledo, Department of Physics and Astronomy, MS 111, McMaster Hall, Toledo, Ohio 43606
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Abstract

In this paper we focus on indium oxide and indium iron oxide as an alloy to fabricate a protective thin film (transparent, conductive, and corrosion resistant; TCCR) for amorphous silicon-based solar cells, which can be used in immersion-type photoelectrochemical cells for hydrogen production. From the work completed, the results indicate that samples made at 250 °C with indium and indium iron oxide targets powered at 30 and 100 W, respectively, and a sputter deposition time of 90 min produced optimal results when deposited directly on single-junction amorphous silicon solar cells. At 0.65 V (versus SCE), the best sample conditions display a maximum current density of 21.4 μA/cm2.

Keywords

energy storageoxidesputtering
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 1: Photocatalysis for Energy and Environmental Sustainability , January 2010 , pp. 25 - 31
Copyright
Copyright © Materials Research Society 2010

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References

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