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In situ reduction kinetics of NiCl2 in SiO2 gel matrix

Published online by Cambridge University Press:  03 March 2011

A. Basumallick ,
K. Biswas ,
G.C. Das  and
S. Mukherjee
A. Basumallick
Affiliation:
Department of Metallurgical Engineering, Jadavpur University, Calcutta 700032, and Department of Metallurgical Engineering, Bengal Engineering College, Howrah 711 103, India
K. Biswas
Affiliation:
Department of Metallurgical Engineering, Jadavpur University, Calcutta 700032, India
G.C. Das
Affiliation:
Department of Metallurgical Engineering, Jadavpur University, Calcutta 700032, India
S. Mukherjee
Affiliation:
Department of Metallurgical Engineering, Jadavpur University, Calcutta 700032, India
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Abstract

Silica gcls containing NiCl2 and dextrose have been reduced by heat-treating the gels under N2 atmosphere at 800 °C, 850 °C, 900 °C, and 950 °C, respectively. The influence of the volume ratio of ethyl alcohol to tetraethylorthosilicate and the amount of dextrose on the in situ reduction kinetics of NiCl2 in gel matrix have been investigated. The kinetic data on in situ reduction have been analyzed by a reduced time method which indicates that mixed mechanisms are operative. The predominant mechanism of reduction of NiCl2 in SiO2 gel matrix is of nucleation and growth type. The activation energies over different temperatures and fraction converted have been computed by the integration method.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2938 - 2944
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Chakravorty, D., Shuttleworth, A., and Gaskell, P. H., J. Mater. Sci. 10, 799 (1975).CrossRefGoogle Scholar
2Granqvist, C.G. and Hunderi, O., Phys. Rev. 316, 3513 (1977).CrossRefGoogle Scholar
3Das, G. C., Das, R., and Chakravorty, D., Bull. Mater. Sci. 5, 277 (1983).CrossRefGoogle Scholar
4Chakravorty, D., Bandopadhyay, A. K., and Nagesh, V. K., J. Phys. D. Appl. Phys. 10, 2077 (1977).CrossRefGoogle Scholar
5Dutta, S., Bahadur, D., and Chakravorty, D., J. Phys. D. Appl. Phys. 17, 163 (1984).CrossRefGoogle Scholar
6Chatterjee, A. and Chakravorty, D., J. Phys. D. Appl. Phys. 22, 1386 (1989).CrossRefGoogle Scholar
7Das, G.C., Basumallick, A., and Mukherjee, S., Bull. Mater. Sci. 13, 255 (1990).CrossRefGoogle Scholar
8Das, G. C., Basumallick, A., Biswas, K., and Mukherjee, S., Bull. Mater. Sci. 16, 317 (1993).CrossRefGoogle Scholar
9Da Silva, A., Donoso, P., and Aegerter, M. A., J. Non-Cryst. Solids 145, 168 (1992).CrossRefGoogle Scholar
10Sharp, J.H., Brindley, G.W., and Achar Narahaki, B.N., J. Am. Ceram. Soc. 49, 379 (1966).CrossRefGoogle Scholar
11Dey, S. K., Jana, B., and Basumallick, A., ISIJ. Int. 33, 735 (1993).CrossRefGoogle Scholar