Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-05-12T00:25:42.008Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of the morphological stability of Ag film on (001)Si with a thin interposing Au layer

Published online by Cambridge University Press:  31 January 2011

Y. C. Peng ,
C. R. Chen  and
L. J. Chen
Y. C. Peng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
C. R. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Extract

The morphological stability of ultrahigh vacuum deposited Ag film on (001)Si has been drastically improved by the deposition of 1 to 5 nm thick interposing Au layers. In Ag/(001)Si samples, Ag islands were found to form after annealing at 200 °C for 1 h. In contrast, continuous and uniform metal layer persisted after annealing at 500 °C for 1 h in samples with a thin intermediate Au layer. The significantly improved morphological stability is attributed to the strong intermixing between Au and Ag atoms at the metal/Si interface. The intermixing lowers the interface energy between metal layer and (001)Si.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 1 , January 1998 , pp. 90 - 93
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Chen, L. J. and Tu, K. N., Mater. Sci. Rep. 6, 53 (1991).CrossRefGoogle Scholar
2.Le Lay, G., Surf. Sci. 132, 169 (1983).CrossRefGoogle Scholar
3.Hiraki, A., Surf. Sci. Rep. 3, 357 (1984).CrossRefGoogle Scholar
4.Hiraki, A., Nicolet, M. A., and Mayer, J. W., Appl. Phys. Lett. 23, 666 (1973).Google Scholar
5.Hiraki, A., Lugujjo, E., Nicolet, M. A., and Mayer, J. W., Phys. Status Solidi A 7, 401 (1971).CrossRefGoogle Scholar
6.LeGoues, F. K., Liehr, M., Renier, M., and Krakow, W., Philos. Mag. B57, 179 (1988).CrossRefGoogle Scholar
7.Hanbucken, M., Futamoto, M., and Venables, J. A., Surf. Sci. 147, 433 (1984).CrossRefGoogle Scholar
8.Nason, T. C., You, L., and Lu, T-M., J. Appl. Phys. 72, 462 (1992).CrossRefGoogle Scholar
9.Hanbucken, M. and Le Lay, G., Surf. Sci. 168, 122 (1986).CrossRefGoogle Scholar
10.Chen, C. R. and Chen, L. J., J. Appl. Phys. 78, 919 (1995).CrossRefGoogle Scholar
11.Yuhara, J., Inoue, M., and Morita, K., J. Vac. Sci. Technol. A 11, 2714 (1993).CrossRefGoogle Scholar
12.Chen, C. R. and Chen, L. J., Appl. Surf. Sci. 92, 507 (1996).CrossRefGoogle Scholar
13.Hassam, S., Agren, J., Escard, M. G., and Bros, J. P., Metall. Trans. A 21, 1877 (1990).CrossRefGoogle Scholar