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High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC

Published online by Cambridge University Press:  31 January 2011

Byung-Teak Lee ,
Yang-Soo Shin  and
Jin Hyeok Kim
Byung-Teak Lee
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, Korea
Yang-Soo Shin
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, Korea
Jin Hyeok Kim*
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, Korea
*
a)Address all correspondence to this author. e-mail: jinhyeok@chonnam.ac.kr
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Abstract

Interfacial reactions between an Al thin film and a single-crystal (001) 6H–SiC substrate were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. Aluminum thin films were prepared by radio-frequency magnetron sputtering method on 6H–SiC substrates at room temperature and then annealed at various temperatures from 500 to 900 °C. A columnar-type polycrystalline Al thin film was formed on a 6H–SiC substrate in the as-deposited sample. No remarkable microstructural change, compared to the as-deposited sample, was observed in the sample annealed at 500 °C for 1 h. However, it was found that the Al layer reacted with the SiC substrate at 700 °C and formed an Al–Si–C ternary compound at the Al/SiC interface. Samples annealed at 900 °C showed a double-layer structure with an Al–Si mixed surface layer and an Al–Si–C compound layer below in contact with the substrate.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 11 , November 2000 , pp. 2284 - 2287
Copyright
Copyright © Materials Research Society 2000

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References

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