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High-resolution electron microscopy of metal/metal and metal/metal-oxide interfaces in the Ag/Ni and Au/Ni systems

Published online by Cambridge University Press:  31 January 2011

Y. Gao
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
Karl L. Merkle
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
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Abstract

The atomic structures of heterophase interfaces with large misfits (>14% in Ag/Ni and Au/Ni) and with small misfits (∼2% in Ag/NiO and Au/NiO) have been studied by high-resolution electron microscopy (HREM). It is found that all interfaces are strongly faceted on (111) planes. This indicates that (111) interfaces have the lowest interfacial energy in both metal/metal and metal/metal-oxide systems. For the metal interfaces, this also agrees with determinations of interfacial energies by lattice statics calculations. The large misfit of Ag/Ni and Au/Ni interfaces is accommodated by misfit dislocations. Observations of misfit localization by HREM are in good agreement with images derived from computer simulation, based on relaxed structures, obtained in embedded atom calculations. All misfit dislocations at the Ag/Ni and Au/Ni interfaces lie exactly in the plane of the interfaces, while the dislocations at Ag/NiO and Au/NiO interfaces reside at a stand-off distance, 3 to 4 (111)Ag or (111)Au interplanar spacings from the interfaces.

Type
Articles
Copyright
Copyright © Materials Research Society 1990

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References

1Electronic Packaging Materials Science, edited by Giess, E. A., Tu, K. N., and Uhlmann, D. R. (Mater. Res. Soc. Symp. Proc. 40, Pittsburgh, PA, 1985).Google Scholar
2Layered Structures, Epitaxy and Interfaces, edited by Gibson, J. M. and Dawson, C. R. (Mater. Res. Soc. Symp. Proc. 37, Pittsburgh, PA, 1985).Google Scholar
3Proc. Int. Conf. on the Structure and Properties of Internal Interfaces, edited by M. Riihle, R. W. Balluffi, H. Fischmeister, and S. L. Sass, J. Physique Colloq. 46, C4 (1985).Google Scholar
4Designing Interfaces for Technological Applications: Ceramic- Ceramic and Ceramic-Metal Joining, edited by Peteves, S. D. (Elsevier Science Publishing Co., Inc., New York, 1989).Google Scholar
5 Panel Report on Interfacial Bonding and Adhesion, Mater. Sci. Eng. 83, 169 (1986).Google Scholar
6Thin Films — Interfaces and Phenomena, edited by Nemanich, R. J., Ho, P. S., and Lau, S. S. (Mater. Res. Soc. Symp. Proc. 54, Pittsburgh, PA, 1986).Google Scholar
7Burger, K., Mader, W., and Riihle, M., Ultramicroscopy 22, 1 (1987).CrossRefGoogle Scholar
8Merkle, K. L. and Shao, B., in Interfacial Structure, Properties, and Design, edited by Yoo, M. H., Clark, W. A. T., and Briant, C. L. (Mater. Res. Soc. Symp. Proc. 122, Pittsburgh, PA, 1988), p. 69.Google Scholar
9Necker, G. and Mader, W., Phil. Mag. Lett. 58, 205 (1988).CrossRefGoogle Scholar
10Merkle, K. L., Acta/Scripta Metall. Conf. on Metal/Ceramic Interfaces, January 16–18, 1989 in Santa Barbara, CA, in press.Google Scholar
11Mader, W., in Characterization of Defects in Materials, edited by Siegel, R. W., Weertman, J. R., and Sinclair, R. (Mater. Res. Soc. Symp. Proc. 82, Pittsburgh, PA, 1987), p. 403.Google Scholar
12Howe, J. M., Laughlin, D. E., and Vasudevan, A. K., Phil. Mag. A 57, 955 (1988).CrossRefGoogle Scholar
13Epitaxial Growth, edited by Matthews, J. W. (Academic Press, New York, 1975).Google Scholar
14Olson, G. B. and Cohen, M., Acta Metall. 27, 1907 (1979).CrossRefGoogle Scholar
15Gao, Y., Dregia, S. A., and Shewmon, P. G., Acta Metall. 37, 1627 (1989).CrossRefGoogle Scholar
16Gao, Y., Shewmon, P. G., and Dregia, S. A., Acta Metall. 37, 3165 (1989).CrossRefGoogle Scholar
17Foiles, S. M., Baskes, M. I., and Daw, M. S., Phys. Rev. B 33, 7983 (1986).CrossRefGoogle Scholar
18Stadelmann, P. A., Ultramicroscopy 21, 131 (1987).CrossRefGoogle Scholar
19Gumbsch, P., Maurer, R., and Fischmeister, H. F., in Interfacial Structure, Properties, and Design, edited by Yoo, M. H., Clark, W. A. T., and Briant, C. L. (Mater. Res. Soc. Symp. Proc. 122, Pittsburgh, PA, 1988), p. 67.Google Scholar
20Kamat, S. V., Hirth, J. P., and Carnahan, B., in Multilayers: Synthesis, Properties, and Nonelectronic Applications, edited by Barbee, T. W. Jr., Spaepen, F., and Greer, L. (Mater. Res. Soc. Symp. Proc. 103, Pittsburgh, PA, 1988), p. 55.Google Scholar
21Simmons, G. and Wang, H., Single Crystal Elastic Constants and Calculated Aggregate Properties: A Handbook (MIT Press, Cambridge, MA, 1971).Google Scholar
22Bollmann, W., Crystal Defects and Crystalline Interfaces (Springer- Verlag, Berlin, 1970).CrossRefGoogle Scholar
23Wolf, D., de, J.Physique 46, 197 (1985)Google Scholar