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High temperature oxidation of ion-plated CrN films

Published online by Cambridge University Press:  03 March 2011

Hiroshi Ichimura
Affiliation:
Central Research Laboratory, Sumitomo Metal Mining Co., Ltd., 18-5, 3 Chome, Nakakokubun Ichikawa-shi Chiba, 272 Japan
Atsuo Kawana
Affiliation:
Central Research Laboratory, Sumitomo Metal Mining Co., Ltd., 18-5, 3 Chome, Nakakokubun Ichikawa-shi Chiba, 272 Japan
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Abstract

The high-temperature oxidation of CrN films which were deposited onto stainless steel substrates using an arc ion plating apparatus was studied at temperatures ranging from 1023 to 1173 K for 0.6 to 480 ks in air. The oxidation rate obtained from mass gain as a function of time was found to fit well to a parabolic time dependence. Formed oxide layers were analyzed by XRD, SEM, and SAM. An activation energy of the oxidation of CrN was slightly lower than that of the self-diffusion coefficient of Cr ion in Cr2O3. It is concluded that the oxidation of CrN is controlled by the outward diffusion of Cr ions through the Cr2O3 layer formed on each CrN grain.

Type
Articles
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Münz, W. D., J. Vac. Sci. Technol. A 4, 2717 (1986).CrossRefGoogle Scholar
2Freller, H. and Haessler, H., Thin Solid Films 153, 433 (1987).CrossRefGoogle Scholar
3Ichimura, H. and Kawana, A., J. Mater. Res. 8, 1093 (1993).CrossRefGoogle Scholar
4Chiba, Y., Omura, T., and Ichimura, H., J. Mater. Res. 8, 1109 (1993).CrossRefGoogle Scholar
5Kawana, A. and Ichimura, H., Shigen Sozai Gakkai-shi (in Japanese) 108, 868 (1992).CrossRefGoogle Scholar
6Navinsek, B. and Panjan, P., Thin Solid Films 223, 4 (1993).CrossRefGoogle Scholar
7Kofstad, P. and Lillerude, K., J. Electrochem. Soc. 127, 73 (1980).CrossRefGoogle Scholar
8Jander, W., Z. Anorg. Chem. 163, 1 (1927).CrossRefGoogle Scholar
9Hagel, W. C. and Seybolt, A. U., J. Electrochem. Soc. 108, 1146 (1961).CrossRefGoogle Scholar
10Lindner, R. and Akeratrom, A., Z. Phys. Chem. (Frankfurt), N.F. 6, 162 (1956).CrossRefGoogle Scholar