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Growth of (11n) oriented Bi–Ca–Sr–Cu–O films by liquid phase epitaxial method

Published online by Cambridge University Press:  31 January 2011

K. K. Raina
Affiliation:
Center for Electronic Materials, Devices and Systems, Department of Electrical Engineering, Texas A&M University, College Station, Texas 77843-3253
R. K. Pandey
Affiliation:
Center for Electronic Materials, Devices and Systems, Department of Electrical Engineering, Texas A&M University, College Station, Texas 77843-3253
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Abstract

Films of Bi–Ca–Sr–Cu–O (BCSCO) superconductor of the Bi2CaSr2Cu2Ox composition have been grown by the liquid phase epitaxy method (LPE) using a partially closed growth chamber. The films were grown on (110) NdGaO3 substrates by slow cooling under optimized conditions below the peritectic melting point (885 °C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature, and growth period, results in the formation of the 2122 phase of BCSCO. X-ray diffraction (XRD) measurements show that the films grown on (110) NdGaO3 have a preferred (11n) orientation. The best values of zero resistance transition (Tc0) and critical current density (Jc0) obtained for films grown on (110) NdGaO3 substrates are 87 K and 5.7 × 104 A/cm2 (at 20 K), respectively. The films grown at rotation rates of less than 30 and more than 80 rpm are observed to be associated with a subphase in the Bi2CaSr2Cu2O8 system. Electron microprobe analysis indicates the composition of this subphase to be Bi0.07Ca0.93Sr2Cu5O8. Higher growth temperatures (>860 °C) also encourage the formation of this phase.

Type
Articles
Copyright
Copyright © Materials Research Society 1997

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