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Finite element modeling of microscale thermal residual stresses in Al interconnects

Published online by Cambridge University Press:  31 January 2011

A. Saerens ,
P. Van Houtte  and
S. R. Kalidindi
A. Saerens
Affiliation:
Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Kasteel Park Arenberg 44, B-3001 Leuven, Belgium
P. Van Houtte
Affiliation:
Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Kasteel Park Arenberg 44, B-3001 Leuven, Belgium
S. R. Kalidindi
Affiliation:
Department of Materials Engineering, Drexel University, Philadelphia, Pennsylvania 19104
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Abstract

An elastic-plastic crystalline constitutive model implemented in a finite-element code has been used to predict the microscale thermal residual stresses in Al−1%Si−0.5%Cu interconnects. This fully three-dimensional model accounts for the individual grain orientations in these interconnects, as measured by orientation imaging microscopy. The influence of specific crystal orientations on the residual stress distribution in these interconnects was studied in detail. A sensitivity analysis was performed to identify the parameters that influence strongly the predicted values of the residual stresses and their distributions. For the interconnects studied here, the residual stresses in the metal lines were found to be quite sensitive to the elastic modulus of the passivation material and its geometry. In addition, the volume averages of the predicted stresses were in reasonable agreement with the experimentally determined values from the x-ray technique.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 4 , April 2001 , pp. 1112 - 1122
Copyright
Copyright © Materials Research Society 2001

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