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Fabrication of nanoporous tungsten oxide by galvanostatic anodization

Published online by Cambridge University Press:  03 March 2011

Niloy Mukherjee ,
Maggie Paulose ,
Oomman K. Varghese ,
G. K. Mor  and
Craig A. Grimes
Niloy Mukherjee
Affiliation:
SenTech Corporation, 200 Innovation Boulevard, State College, Pennsylvania 16803
Maggie Paulose
Affiliation:
SenTech Corporation, 200 Innovation Boulevard, State College, Pennsylvania 16803
Oomman K. Varghese
Affiliation:
Department of Electrical Engineering and Department of Materials Science and Engineering, 217 Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
G. K. Mor
Affiliation:
Department of Electrical Engineering and Department of Materials Science and Engineering, 217 Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Craig A. Grimes
Affiliation:
Department of Electrical Engineering and Department of Materials Science and Engineering, 217 Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
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Abstract

Nanoporous tungsten oxide (WO3), with pores of 50 to 100 nm in diameter, has been obtained by galvanostatic (constant-current) anodization of tungsten in a 0.25 M oxalic acid electrolyte. At room temperature, the optimum current density for nanoporous formation is approximately 6.5 to 8 mA/cm2. Monitoring of the anodization voltage during the fabrication process reveals a close match with the theoretical model of Parkhutik et al. [V.P. Parkhutik and V.I. Shershulsky, J. Phys. D 25, 1258 (1992)] for growth of nanoporous Al2O3. The as-anodized films are amorphous and crystallize upon annealing at 350 °C in an oxygen atmosphere.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 18 , Issue 10 , October 2003 , pp. 2296 - 2299
Copyright
Copyright © Materials Research Society 2003

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