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Evidence against surface nucleation following pulsed melting of Si

Published online by Cambridge University Press:  31 January 2011

P. S. Peercy ,
J. Y. Tsao  and
Michael O. Thompson
P. S. Peercy
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185
J. Y. Tsao
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185
Michael O. Thompson
Affiliation:
Cornell University, Ithaca, New York 14853
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Abstract

Time-dependent measurements of the melt and solidification behavior of amorphous Si, formed by ion implantation of In, have been obtained following irradiation with ∼3 ns ruby laser pulses. The recently observed buried In sheets formed under such conditions are shown to result from internal nucleation of melt, contrary to previous interpretations. Under no conditions was surface nucleation of either amorphous or crystalline Si observed from a surface melt. These results resolve previous inconsistencies in the understanding of phase formation during rapid melting and solidification of Si.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 7 , July 1990 , pp. 1463 - 1467
Copyright
Copyright © Materials Research Society 1990

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References

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