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Epitaxial Growth of Patterned SrBi2Ta2O9 Lines by Channel Stamping

Published online by Cambridge University Press:  31 January 2011

Jin Hyeok Kim ,
Frederick F. Lange  and
Chae-Il Cheon
Jin Hyeok Kim
Affiliation:
Materials Department and Materials Research Laboratory, University of California, Santa Barbara, California 93106
Frederick F. Lange
Affiliation:
Materials Department and Materials Research Laboratory, University of California, Santa Barbara, California 93106
Chae-Il Cheon
Affiliation:
Department of Materials & Chemical Engineering, Hoseo University, San29–1, Sechul-Ri, Baebang-Myun, Asan-Si, Chungnam 336–795, Korea
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Abstract

Patterned epitaxial SrBi2Ta2O9 (SBT) lines with (00l) out-of-plane orientation were grown on a (001) SrTiO3 substrate by the novel “channel stamping” method. Parallel channels in a poly(dimethylsiloxane) stamp were filled with a metalorganic precursor solution by spin coating. After solvent evaporation, the solid precursor within the channels was transferred to the substrate by stamping. Stamped precursor lines were pyrolyzed at 350 °C/1 h and then heated to 850 °C/1 h. It was shown by x-ray diffraction and scanning electron microscopy that patterned SBT lines were epitaxial, had a smooth surface with c-axis out-of-plane orientation, and a single in-plane orientation.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1194 - 1196
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Lange, F. F., Science 273, 903 (1996).Google Scholar
2.Moreau, W.M., Semiconductor Lithography: Principles and Materials (Plenum, New York, 1988).Google Scholar
3.Kumar, A., Biebuyck, H. A., and Whitesides, G. M., Langmuir 10, 1498 (1994).Google Scholar
4.Kim, E., Xia, Y., and Whitesides, G. M., Nature (London) 376, 581 (1995).Google Scholar
5.Chou, S.Y., Krauss, P. R., and Renstrom, P. J., J. Vac. Sci. Technol. B 14, 4129 (1996).Google Scholar
6.Wang, D., Thomas, S.G., Wang, K.L., Xia, Y., and Whitesides, G.M., Appl. Phys. Lett. 70, 1593 (1997).Google Scholar
7.Moran, P. M. and Lange, F. F., unpublished.Google Scholar
8.Aurivillus, B., Arkiv Kemi 1 463 (1949).Google Scholar
9.Amanuma, K., Hase, T., and Miyasaka, Y., Appl. Phys. Lett. 66, 221 (1995).Google Scholar
10.Lee, J. S., Kim, H. H., Kwon, H. J., and Jeong, Y. W., Appl. Phys. Lett. 73, 166 (1998).Google Scholar