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Epitaxial growth of antiperovskite GaCMn3 film on perovskite LaAlO3 substrate

Published online by Cambridge University Press:  31 January 2011

H. S. Choi ,
W. S. Kim ,
J. C. Kim  and
N. H. Hur
H. S. Choi
Affiliation:
Center for CMR Materials, Korea Research Institute of Standards and Science, P.O. 102 Yusong, Taejon 305–600, Korea
W. S. Kim
Affiliation:
Center for CMR Materials, Korea Research Institute of Standards and Science, P.O. 102 Yusong, Taejon 305–600, Korea
J. C. Kim
Affiliation:
Center for CMR Materials, Korea Research Institute of Standards and Science, P.O. 102 Yusong, Taejon 305–600, Korea
N. H. Hur
Affiliation:
Center for CMR Materials, Korea Research Institute of Standards and Science, P.O. 102 Yusong, Taejon 305–600, Korea
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Abstract

We report on the magnetic and transport properties of the antiperovskite GaCMn3 film epitaxially grown on LaAlO3 using the pulsed laser deposition technique. Upon cooling from room temperature, the GaCMn3 film undergoes magnetic transitions from paramagnetic to ferromagnetic to antiferromagnetic. The Curie and Neél temperatures of the film shift to lower and higher temperatures, respectively, by comparison with those of the bulk sample. This discrepancy is mainly ascribed to the compressive strain effect induced by the lattice-mismatch between film and substrate. Negative magnetoresistance, which is about 20% at 0.5 T, is observed near the Neél temperature.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 10 , October 2002 , pp. 2640 - 2643
Copyright
Copyright © Materials Research Society 2002

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References

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