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Electronic Superstructures Observed by Scanning Tunneling Microscopy on Graphene Sheet in Vicinity of Nano-Defects of Ir(111) Substrate

Published online by Cambridge University Press:  03 March 2011

Z. Waqar ,
I.V. Makarenko ,
A.N. Titkov ,
N.R. Gall ,
E.V. Rutkov ,
A.Ya. Tontegode  and
Ph. Dumas
Z. Waqar
Affiliation:
A. F. Ioffe, Physical-Technical Institute, Russian Academy of Science, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia
I.V. Makarenko
Affiliation:
A. F. Ioffe, Physical-Technical Institute, Russian Academy of Science, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia
A.N. Titkov
Affiliation:
A. F. Ioffe, Physical-Technical Institute, Russian Academy of Science, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia
N.R. Gall
Affiliation:
A. F. Ioffe, Physical-Technical Institute, Russian Academy of Science, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia
E.V. Rutkov
Affiliation:
A. F. Ioffe, Physical-Technical Institute, Russian Academy of Science, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia
A.Ya. Tontegode
Affiliation:
A. F. Ioffe, Physical-Technical Institute, Russian Academy of Science, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia
Ph. Dumas
Affiliation:
A. F. Ioffe, Physical-Technical Institute, Russian Academy of Science, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia
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Abstract

Two-dimensional electronic and atomic superstructures (SS) on monolayer graphite (graphene) grown on a clean Ir(111) surface were observed near substrate nano-defect sites by scanning tunneling microscopy. These SS were found rotated 30° with respect to the undistorted areas (away from defects sites) of the graphene layer with a periodicity of and a(a = 2.46 Å)decay over a distance of few nanometers away from the defects. The observed SS were not due to real surface reconstruction, rather they just had an electronic nature.

Keywords

STMAFMChemical vapor deposition (CVD)
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 4 , April 2004 , pp. 1058 - 1061
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Tontegode, A.Ya.: Prog. Surf. Sci. 38, 201 (1991).Google Scholar
2Gall, N.R., Rut’kov, E.V. and Ya, A.: Int. J. Mod. Phys. B. 11, 1865 (1997).Google Scholar
3Tontegode, A.Ya. and Rutkov, E.V.: Uspehi Fiz. Nauk. 163, 57 1993. Sov. Phys. Usp. 36, 1053 (1993).Google Scholar
4Rut’kov, E.V., Tontegode, A.Ya. and Usufov, M.M.: Phys. Rev. Lett. 74, 758 (1995).Google Scholar
5Nagashima, A., Itoh, H., Oshima, C. and Otani, S.: Phys. Rev. B. 50, 4756 (1994).Google Scholar
6Itoh, H., Ichinose, T. and Ichinokawa, T.: Surf. Sci. Lett. 254 L437 (1991).Google Scholar
7Land, T.A., Behm, R.J., Hemminger, J.C. and Comsa, G.: Surf. Sci. 264, 261 (1992).Google Scholar
8Walter, J., Shioyama, H. and Sawada, Y.: Carbon. 36, 1811 (1998).Google Scholar
9Albrecht, T.R., Mizes, H.A., Nojami, J., Park, Sang-il and Quate, C.F.: Appl. Phys. Lett. 52, 362 (1988).Google Scholar
10Mizes, H.A. and Fosters, J.S.: Science. 244, 559 (1989).Google Scholar
11Xhie, J., Sattler, K., Muller, U., Venkateswaran, N. and Raina, G.: Phys. Rev. B43, 8917 (1991).Google Scholar
12Valenzuela-Benavides, J. and de Garza, L. Morales la: Surf. Sci. 330, 227 (1995).Google Scholar
13Selloni, A., Chen, C.D. and Tosatti, E.: Phys. Scr. 38, 297 (1988).Google Scholar
14Qin, X. and Kirczenow, G.: Phys. Rev. B. 39, 6245 (1989).Google Scholar
15Gauthier, S., Rousset, S., Klein, J., Sacks, W. and Belin, M.: J. Vac. Sci. Technol. A6, 360 (1988).Google Scholar
16Kelty, S.P. and Lieber, C.M.: Phys. Rev. B40, 5856 (1989).Google Scholar
17Coleman, R.V., Drake, B., Hansma, P.K. and Slough, G.: Phys. Rev. Lett. 55, 394 (1985).Google Scholar
18Mizes, H.A., Harrison, W.A. and Park, Sang-il: Phys. Rev. B. 36, 4491 (1987).Google Scholar
19Park, S.I., Nogami, J. and Quate, C.F.: Phys. Rev. B. 36, 2863 (1987).Google Scholar
20Aires, F. J. Cadete Santos, Sautet, P. and Rousset, J. L.: JVST B. 12, 1776 (1994).Google Scholar
21Ganz, E., Sattler, K. and Clarke, J.: Phys. Rev. Lett. 18, 1856 (1988).Google Scholar
22Coleman, R.V., Giambattista, B., Hansma, P.K., Johnson, A., McNairy, W.W. and Slough, C.G.: Adv. In Phys. 37, 559 (1988).Google Scholar
23Rut’kov, E.V. and Tontegode, A.Ya.: Pisma v Zh Tech Fiz 7, 1122 (1981).Google Scholar
24Yamamoto, K., Fukushima, M., Osaka, T. and Oshima, C.: Phys. Rev. B. 45, 11358 (1992).Google Scholar