Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-07-02T00:42:23.812Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrodeposition of Fe–Co Alloys into Nanoporous p-type Silicon: Influence of the Electrolyte Composition

Published online by Cambridge University Press:  31 January 2011

F. Hamadache ,
J-L. Duvail ,
V. Scheuren ,
L. Piraux ,
C. Poleunis ,
P. Bertrand  and
M. S. Belkaïd
F. Hamadache
Affiliation:
Unité de Physico-Chimie et de Physique des Matériaux, Université Catholique de Louvain, Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgique
J-L. Duvail
Affiliation:
Laboratoire de Physique Cristalline, Institut des Matériaux de Nantes, 2, Rue de la Houssinière, 44322 Nantes cedex 03, France
V. Scheuren
Affiliation:
Laboratoire de Microélectronique, Université Catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgique
L. Piraux
Affiliation:
Unité de Physico-Chimie et de Physique des Matériaux, Université Catholique de Louvain, Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgique
C. Poleunis
Affiliation:
Unité de Physico-Chimie et de Physique des Matériaux, Université Catholique de Louvain, Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgique
P. Bertrand
Affiliation:
Unité de Physico-Chimie et de Physique des Matériaux, Université Catholique de Louvain, Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgique
M. S. Belkaïd
Affiliation:
Laboratoire de Microélectronique Appliquée, Université Mouloud Mammeri de Tizi-Ouzou, Campus Universitaire Hasnaoua, 15000 Tizi-Ouzou, Algérie
Get access

Extract

The cathodic deposition of iron–cobalt alloys inside the pores of anodically formed nanoporous silicon (PS) from p-type Si substrate is investigated with respect to the electrolyte composition. The samples were characterized by scanning electron microscopy, energy dispersive spectrometry, Auger electron spectroscopy, and Fourier transform infrared spectroscopy. Results showed that the nucleation of pure cobalt started at the bottom of the pores and the nucleation of pure iron occurred all over the pore walls, leading to a preferential deposition on top surface of the porous layer. Nevertheless, a low concentration of Co2+ ions (5 at.%) in the electrolyte drastically improved the penetration of iron into the pores. As a result, a good filling of the pores with Co metal as well as with Fe–Co alloys was achieved. It was also shown that the deposition process oxidizes the structure mainly at the pore walls. The results of our investigation indicate that the mechanisms occurring during the electrodeposition of metals on porous p-type silicon substrates are completely different depending on the kind of electrolyte used: pure iron-based electrolyte or cobalt-based solutions. A complete understanding of the deposition process requires further analyses of the carrier transport in PS and of the charge exchange at the Si/electrolyte and PS/electrolyte interfaces. These new results involving the deposition of iron-group materials into porous p-type silicon are useful for future silicon technologies.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 5 , May 2002 , pp. 1074 - 1084
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Hérino, R., Mater. Sci. Eng., B 69–70, 70 (2000).CrossRefGoogle Scholar
2.Renaux, C., Scheuren, V., and Flandre, D., Micrcelectron. Reliab. 40, 877 (2000).CrossRefGoogle Scholar
3.Li, X.J., Zhu, De L., Chen, Q.W., and Zhang, Y.H., Appl. Phys. Lett. 74, 389 (1999).CrossRefGoogle Scholar
4.Ronkel, F., Schultze, J.W., and Arens-Fischer, R., Thin Solid Films 276, 40 (1996).CrossRefGoogle Scholar
5.Aylett, B.J., Harding, I.S., Earwaker, L.G., Forcey, K., and Giaddui, T., Thin Solid Films 276, 253 (1996).CrossRefGoogle Scholar
6.Jeske, M., Schultze, J.W., Thönissen, M., and Münder, H., Thin Solid Films 255, 63 (1995).CrossRefGoogle Scholar
7.Ito, T., Yoneda, T., Furuta, K., Hatta, A., and Hiraki, A., Jpn. J. Appl. Phys. 34, L649 (1995).CrossRefGoogle Scholar
8.Steiner, P., Kozlowski, F., and Lang, W., Thin Solid Films 255, 49 (1995).CrossRefGoogle Scholar
9.Izidinov, S.O., Nazarov, V.N., and Shcheglov, O.E., Russ. J. Appl. Chem. 68 (Part 1), 519 (1995).Google Scholar
10.Gusev, S.A., Korotkova, N.A., Rozenstein, D.B., and Fraerman, A.A., J. Appl. Phys. 76, 6671 (1994).CrossRefGoogle Scholar
11.Anderson, D.G., Anwar, N., Aylett, B.J., Earwaker, L.G., Nasir, M.I., Farr, J.P.G., Stiebahl, K., and Keen, J.M., J. Organomet. Chem. 437, C7 (1992).CrossRefGoogle Scholar
12.Ito, T., Yamama, A., Hiraki, A., and Satou, M., Appl. Surf. Sci. 41/ 42, 301 (1989).CrossRefGoogle Scholar
13.Tsao, S.S., Blewer, R.S., and Tsao, J.Y., Appl. Phys. Lett. 49, 403 (1986).CrossRefGoogle Scholar
14.Herino, R., Jan, P., and Bomchil, G., J. Electrochem. Soc. 132, 2513 (1985).CrossRefGoogle Scholar
15.Tsuya, N., Saito, Y., Nakamura, H., Hayano, S., Furugohri, A., Ohta, K., Wakui, Y., and Tokushima, T., J. Magn. Magn. Mater. 54–57, 1681 (1986).CrossRefGoogle Scholar
16.Whitney, T.M., Jiang, J.S., Searson, P., and Chien, C., Science 261, 1316 (1993).CrossRefGoogle Scholar
17.Piraux, L., George, J.M., Despres, J.F., Leroy, C., Ferain, E., Legras, R., Ounadjla, K., and Fert, A., Appl. Phys. Lett. 65, 2484 (1994).CrossRefGoogle Scholar
18.Zech, N., Podlaha, E.J., and Landolt, D., J. Appl. Electrochem. 28, 1251 (1998).CrossRefGoogle Scholar
19.Ebothe´, J. and Vilain, S., J. Phys. D: Appl. Phys. 32, 2342 (1999).CrossRefGoogle Scholar
20.Kakuno, E.M., Mosca, D.H., Mazzaro, I., Mattoso, N., Schreiner, W.H., and Gomes, M.A.B., J. Electrochem. Soc. 144, 3222 (1997).CrossRefGoogle Scholar
21.Kakuno, E.M., Silva, R.C. da, Mattoso, N., Schreiner, W.H., Mosca, D.H., and Teixeira, S.R., J. Phys. D: Appl. Phys. 32, 1209 (1999).CrossRefGoogle Scholar
22.Bohne, W., Reinsperger, G.U., Röhrich, J., Rôschert, G., and Selle, B., Nucl. Instrum. Methods Phys. Res. Sect. B 136–138, 273 (1998).CrossRefGoogle Scholar
23.Hong, S., Pirri, C., Wetzel, P., and Gewinner, G., Phys. Rev. B 55, 13040 (1997).CrossRefGoogle Scholar
24.Teichert, S., Kilper, R., Franke, T., Erben, J., Häussler, P., Henrion, W., Lange, H., and Panknin, D., Appl. Surf. Sci. 91, 56 (1995).CrossRefGoogle Scholar
25. MultiPak Software Manual V5.0, Part No. 638366, Rev. A, 02 Oct. 1997 (Physical Electronics, Inc., Eden Prairie, MN, 1994–1997). p. C1.Google Scholar
26.Feng, Z.C., Wee, A.T.S., and Tan, K.L., J. Phys. D: Appl. Phys. 27, 1968 (1994).CrossRefGoogle Scholar
27.Mizuno, H., Koyama, H., and Koshida, N., Appl. Phys. Lett. 69, 3779 (1996).CrossRefGoogle Scholar
28.Hilliard, J., Andsager, D., L. Abu Hassan, Nayfeh, H.M., and Nayfeh, M.H., J. Appl. Phys. 76, 2423 (1994).CrossRefGoogle Scholar
29.Ban, T., Koizumi, T., Haba, S., Koshida, N., and Suda, Y., Jpn. J. Appl. Phys. 33, 5603 (1994).CrossRefGoogle Scholar
30.Xi, Y.H., Wilson, W.L., Ross, F.M., Mucha, J.A., Fitzgerald, E.A., Macaulay, J.M., and Harris, T.D., J. Appl. Phys. 71, 2403 (1992).CrossRefGoogle Scholar
31.Hory, M.A., Hérino, R., Ligeon, M., Muller, F., Gaspard, F., Mihalcescu, I., and Vial, J.C., Thin Solid Films 255, 200 (1995).CrossRefGoogle Scholar
32.Brenner, A., Electrodeposition of alloys (Academic, New York, 1963).Google Scholar
33.Gao, L.J., Anderson, G.W., and Norton, P.R., J. Appl. Phys. 79, 5795 (1995).CrossRefGoogle Scholar
34.Ben-Chorin, M., Möller, F., and Koch, F., Phys. Rev. B 49, 2981 (1994).CrossRefGoogle Scholar
35.Pulsford, N.J., Rikken, G.L.J.A., Kessener, Y.A.R.R., Lous, E.J., and Venhuizen, A.H.J., J. Appl. Phys. 75, 636 (1994).CrossRefGoogle Scholar
36.Steivenard, D. and Deresmes, D., Appl. Phys. Lett. 67, 1570 (1995).CrossRefGoogle Scholar
37.Bsiesy, A., Gelloz, B., Gaspard, F., and Muller, F., J. Appl. Phys. 276, 175 (1996).Google Scholar
38.Ray, A.K., Mabrook, M.F., Nabok, A.V., and Brown, S., J. Appl. Phys. 84, 3232 (1998).CrossRefGoogle Scholar
39.Goryachev, D.N., Polisskii, G., and Sreseli, O.M., Fiz. Tekh. Poluprovodn. (S. Peterburg) 34, 221 (2000) [Semiconductors 34, 227 (2000)].Google Scholar
40.Jeske, M., Schultze, J.W., and Münder, H., Electrochim Acta 40, 1435 (1995).CrossRefGoogle Scholar
41.Montès, L., Muller, F., Gaspard, F., and Hérino, R., Thin Solid Films 29, 35 (1997).CrossRefGoogle Scholar