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Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

Published online by Cambridge University Press:  31 January 2011

Bilge Imer ,
Benjamin Haskell ,
Siddharth Rajan ,
Stacia Keller ,
Umesh K. Mishra ,
Shuji Nakamura ,
James S. Speck  and
Steven P. DenBaars
Bilge Imer*
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; and Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106
Benjamin Haskell
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; and Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106
Siddharth Rajan
Affiliation:
University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
Stacia Keller
Affiliation:
University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
Umesh K. Mishra
Affiliation:
University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
Shuji Nakamura
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106; and University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
James S. Speck
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; and Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106
Steven P. DenBaars
Affiliation:
University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106; and University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
*
a) Address all correspondence to this author. e-mail: bilge@engineering.ucsb.edu
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Abstract

We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 × 1019 cm−3 as 261.12 cm2/Vs for SLEO a-GaN and 106.77 cm2/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was ∼12% less than planar samples.

Keywords

DefectsNitrideElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 2 , February 2008 , pp. 551 - 555
Copyright
Copyright © Materials Research Society 2007

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References

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