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Effect of ultraviolet cure on the interfacial toughness and structure of SiOC thin film on Si substrate

Published online by Cambridge University Press:  31 January 2011

M. Takeda ,
N. Matoba ,
K. Matsuda ,
H. Seki ,
K. Inoue ,
M. Oishi  and
M. Sakai
M. Oishi
Affiliation:
Toray Research Center, Inc., Otsu, 520-8567 Japan
M. Sakai*
Affiliation:
Department of Materials Science, Toyohashi University of Technology, Tempakucho, Toyohashi, 441-8580 Japan
*
b)This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/jmr_policy
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Abstract

An experimental study on the adhesion of thin films was conducted for the ultraviolet (UV)-cured SiOC films on Si substrate by examining the mechanical energy balance during the indentation process combined with atomic force microscopy observation. The effect of UV cure on the interfacial delamination toughness and the structure of the SiOC films are discussed. The energy release rate of the SiOC film/Si substrate interfacial delamination increases with the increases in the time of UV curing, indicating that the indentation method is efficient to examine the adhesion of coating. As the UV curing time increases, the film thickness and the Si–CH3 bond structure decrease, whereas the SiO2 network structure develops and the mechanical properties of the film are improved. Furthermore, the energy release rate of SiOC film/Si interfacial delamination is well correlated in a proportional manner to the Young's modulus of the film.

Keywords

Nanoindentation
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 10 , October 2010 , pp. 1910 - 1916
Copyright
Copyright © Materials Research Society 2010

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References

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