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Effect of the element ratio in the doping component on the properties of 0.975(0.8Bi1/2Na1/2TiO3–0.2Bi1/2K1/2TiO3)–0.025Bix/3Mgy/3Nbz/3O3 ceramics

Published online by Cambridge University Press:  30 September 2020

Guangzhi Dong*
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China Institute for Superconducting and Electronic Materials, Australia Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales2522, Australia
Huiqing Fan
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Yuxin Jia
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
*
a)Address all correspondence to this author. e-mail: dongguangzhi@nwpu.edu.cn
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Abstract

A new series of ternary perovskite 0.975(0.8Bi1/2Na1/2TiO3–0.2Bi1/2K1/2TiO3)–0.025Bix/3Mgy/3Nbz/3O3 (BNT–BKT–BMN, BMN-xyz) ceramics were designed and synthesized. The effect of the element ratio in the doping component BMN on the strain, ferroelectric, piezoelectric, and dielectric properties of the BNT–BKT matrix were studied. The BMN-430 composition without Nb element exhibits the typical features of non-ergodic relaxor, which is characterized by a higher piezoelectric coefficient d33 and a butterfly-shaped strain curve with negative strain. The introduction of trace Nb can significantly enhance the ergodicity of the system, reflecting in the high positive strain response and strain coefficient $\lpar {d_{33}^\ast \gt 750\;{\rm pm/V}} \rpar$ of BMN-321 composition. In contrast, there is no significant difference in the properties between the presence and absence of Mg element. The temperature-dependent electrical behaviors of BMN-xyz ceramics were analyzed based on impedance spectroscopy. This study may be helpful to the design of the chemical modification strategy for the BNT-based relaxor ferroelectrics.

Type
Invited Paper
Copyright
Copyright © The Author(s), 2020, published on behalf of Materials Research Society by Cambridge University Press

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