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Effect of reaction temperature on the average crystallite size of SexTe1−x alloys

Published online by Cambridge University Press:  31 January 2011

Santokh S. Badesha ,
George T. Fekete  and
Ihor Tarnawskyj
Santokh S. Badesha
Affiliation:
Xerox Webster Research Center, 800 Phillips Road 0114-39D, Webster, New York 14580
George T. Fekete
Affiliation:
Xerox Webster Research Center, 800 Phillips Road 0114-39D, Webster, New York 14580
Ihor Tarnawskyj
Affiliation:
Xerox Webster Research Center, 800 Phillips Road 0114-39D, Webster, New York 14580
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Abstract

Electrophotographic properties of chalcogenide materials are readily influenced by altering their composition and/or structure. Dark decay and cycle down of photoreceptors utilizing small particle generators are both directly proportional to average crystallite size (ACS). This paper describes a novel chemical method to control the ACS of Se, Te, and Sex Te1−x alloys. These chalcogenide materials are prepared as powders by the reduction or coreduction of SeIV and/or TeIV intermediates with hydrazine, in organic media. To control the ACS of precipitated chalcogens the reaction is carried out at the desired temperature. X-ray diffraction measurements are used to determine the ACS, homogeneity, and phase of these precipitated powders.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 1 , Issue 2 , April 1986 , pp. 234 - 236
Copyright
Copyright © Materials Research Society 1986

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References

1Das, G. C. and Bever, M. B., Metall. Trans. 4, 1457 (1973).Google Scholar
2Vermaak, J. S. and Petruzzello, J., J. Appl. Phys. 53, 6809 (1982).CrossRefGoogle Scholar
3Horgan, A. M. and Radler, R. W., U.S. Patent No. 4, 232, 102.Google Scholar
4Matijevic, E. and Bell, A., Particle Growth in Suspension (Academic, New York, 1973), pp. 179–193.Google Scholar
5Smith, T. W., Smith, S. D., and Badesha, S. S., J. Am. Chem. Soc. 106, 7248 (1984); S. S. Badesha and T. W. Smith, U.S. Patent Nos. 4, 460, 408 and 4, 484, 945.Google Scholar
6Loutfy, R. O. and Badesha, S. S., Electrochim. Acta 30, 101 (1985).CrossRefGoogle Scholar
7Azaroff, L. V., Elements of X-ray Crystallography (McGraw-Hill, New York, 1968), pp. 522 and 555.Google Scholar
8Klug, H. P. and Alexander, L. E., X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials (Wiley, New York, 1974), 2nd ed., p. 689.Google Scholar
9Badesha, S. S., Monczka, P., and Smith, S. D., Can. J. Chem. 61, 2199 (1983); S. S. Badesha, I. Tarnawskyj, and T. W. Smith, in Proceedings of the 3rd International Symposium on Industrial Uses of Selenium and Tellurium, Stockholm, Sweden (Selenium Tellurium Development Association, Darien, CT, 1984), p. 351.CrossRefGoogle Scholar