Hostname: page-component-84b7d79bbc-c654p Total loading time: 0 Render date: 2024-07-26T07:12:48.689Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of pre- and postepitaxial deposition annealing on oxygen precipitation in silicon

Published online by Cambridge University Press:  31 January 2011

W. Wijaranakula ,
P.M. Burke ,
L. Forbes  and
J.H. Matlock
W. Wijaranakula
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
P.M. Burke
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
L. Forbes
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
J.H. Matlock
Affiliation:
SEH America, Incorporated, 4111 Northeast, 112th Avenue, Vancouver, Washington 98662
Get access

Abstract

Substrate material used for fabrication of P/P + epitaxial silicon wafers was preannealed at 650 °C in nitrogen ambient prior to the epitaxial deposition process for various times up to 300 min. The substrate material originated from a characterized crystal ingot. The results show that annealing before epitaxial deposition can preserve oxide precipitate nuclei from dissolution during the epitaxial deposition process. Additional postepitaxial annealing at 750 °C further enhances the growth of bulk defects.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 5 , October 1986 , pp. 698 - 704
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Tan, T. Y., Gardner, E. E., and Tice, W. K., Appl. Phys. Lett. 30, 175 (1977).CrossRefGoogle Scholar
2Nagasawa, K., Matsushita, Y., and Kishino, S., Appl. Phys. Lett. 37, 622 (1980).CrossRefGoogle Scholar
3Tempelhoff, K., Hahn, B., and Gleichmann, R., in Semiconductor Silicon, 1981, edited by Huff, H. R., Kriegler, R. J., and Takeishi, Y. (The Electrochemical Society, Pennington, NJ, 1981), p. 244.Google Scholar
4Pearce, C. W. and Rozgonyi, G., in Extended Abstracts, 162nd Electrochemical Society Meeting (The Electrochemical Society, Princeton, NJ, 1982), Vol. 82–2, Abstract No. 1982, p. 228.Google Scholar
5Tsuya, H., Kondo, Y., and Kanamori, M., Jpn. J. Appl. Phys. 622, L16 (1983).Google Scholar
6DeKock, A. J. R., Stacy, W. P., and Wijgert, W. M. Van de, J. Crystal Growth 49, 718 (1980).Google Scholar
7Ourmard, A., Schroter, W., and Bourret, A., J. Appl. Phys. 56, 1670 (1984).Google Scholar
8Hahn, S., Hung, D., Shathas, S., and Rek, S., in VLSI Science and Technology/1984, edited by Bean, K. E. and Rozgonyi, G. A. (The Electrochemical Society, Princeton, NJ, 1984), p.85.Google Scholar
9Inoue, N., Wada, K., and Osaka, J., Mater. Res. Soc. Proc. 14, 125 (1983).Google Scholar
10Inoue, N., Wada, K., and Osaka, J., in Ref. 3, p. 282.Google Scholar
11Wright-Jenkins, M., J. Electrochem. Soc. 124, 752 (1977).Google Scholar
12Swaroop, R. B., in Semiconductor Processing, ASTM STP 850, edited by Gupta, D. C. (American Society for Testing and Materials, Philadelphia, PA, 1984), p. 230.CrossRefGoogle Scholar
13Freeland, P. E., Jackson, K. A., Lowe, C., and Patel, J. R., Bull. Am. Phys. Soc. 21, 229 (1976).Google Scholar