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Effect of internal stress on elemental diffusion and crystallization of electroless Ni–Cu–P deposit on Al

Published online by Cambridge University Press:  31 January 2011

Jen-Che Hsu  and
Kwang-Lung Lin
Jen-Che Hsu
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China
Kwang-Lung Lin
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China
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Abstract

The type and magnitude of stress in electroless Ni–Cu–P deposits on Al were manipulated by controlling the concentration of saccharin in the plating solution. Tensile, zero, and compressive stress of the electroless Ni–Cu–P deposits was obtained with 0, 8, and 10 g/l saccharin for studying the effect of stress on the diffusion and crystallization behavior of the deposit. The effect of stress on the diffusion behavior of Cu, Ni, and Al elements during annealing was investigated. Interdiffusion between Al and Ni in an amorphous Ni–Cu–P/crystal Al diffusion couple is abated by the effects of amorphous structure, atomic affinity, and backstress. Therefore, the effect of stress on diffusion is manifested by Cu elemental diffusion. The tensile stress promotes the formation of Ni3P and the diffusion of Cu into the substrate.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 9 , September 2003 , pp. 2221 - 2227
Copyright
Copyright © Materials Research Society 2003

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