Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-06-21T19:40:30.487Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallization Kinetics of Sol-gel-derived (1x)SrBi2Ta2O9–xBi3TiTaO9 Ferroelectric Thin Films

Published online by Cambridge University Press:  31 January 2011

Woo-Chul Kwak  and
Yun-Mo Sung
Woo-Chul Kwak
Affiliation:
Functional Nanostructured Materials Laboratory (FNML), Department of Materials Science –711, Korea
Yun-Mo Sung*
Affiliation:
Functional Nanostructured Materials Laboratory (FNML), Department of Materials Science –711, Korea
*
a)Address all correspondence to this author. e-mail: ymsung@road.daejin.ac.kr
Get access

Abstract

The crystallization kinetics of Sr0.7Bi2.3Ta2O9 (SBT) and 0.7SrBi2Ta2O9–0.3Bi3TiTaO9 (SBT-BTT) thin films formed by the sol-gel and spin coating techniques were studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetic analysis was performed on the x-ray diffraction results of the thin films heated in the range of 730 to 760 °C at 10 °C intervals. Activation energy and Avrami exponent values were determined for the fluorite-to-Aurivillus phase transformation. A reduction of approximately 51 kJ/mol in activation energy was observed for the SBT-BTT thin films, and an Avrami exponent value of approximately 1.0 was obtained for both the SBT and SBT-BTT. A comparison is made, and the possible crystallization mechanism is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 6 , June 2002 , pp. 1463 - 1468
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Araujo, C.A.P., Cuchiaro, J.D., McMillan, L.D., Scott, M.C., and Scott, J.F., Nature 347, 627 (1995).CrossRefGoogle Scholar
2.Desu, S.B. and Li, T.K., Mater. Sci. Eng. B34, L4 (1995).CrossRefGoogle Scholar
3.Shimakawa, Y., Kubo, Y., Nakagawa, Y., Kamiyama, T., Asano, H., and Izumi, F., Appl. Phys. Lett. 74, 1904 (1999).CrossRefGoogle Scholar
4.We, Y. and Cao, G., Appl. Phys. Lett. 75, 25 (1999).Google Scholar
5.Chen, J., Udayakumar, K.R., Brooks, K.G., and Cross, L.E., J. Appl. Phys. 71, 4465 (1992).CrossRefGoogle Scholar
6.Chen, T-C., Li, T., Zhang, X., and Desu, S.B., J. Mater. Res . 12, 1569 (1997).CrossRefGoogle Scholar
7.Zhu, J., Zhang, X., Zhu, Y., and Desu, S.B., J. Appl. Phys. 83, 1610 (1998).CrossRefGoogle Scholar
8.Ryu, S.O., Tirumala, S., Joshi, P.C., and Desu, S.B., Thin Solid Films 340, 53 (1999).CrossRefGoogle Scholar
9.Toraya, H., Yoshimura, M., and Somiya, S., J. Am. Ceram. Soc. 67, C-119 (1984).CrossRefGoogle Scholar
10.Schmid, H.K., J. Am. Ceram. Soc. 70, 1367 (1987).CrossRefGoogle Scholar
11.Avrami, M., J. Chem. Phys. 7, 1103 (1939).CrossRefGoogle Scholar
12.Duran-Martain, P., Castro, A., Millan, P., and Jimenez, B., J. Mater. Res. 13, 2565 (1998).CrossRefGoogle Scholar
13.Watanable, H., Mihara, T., Yoshimori, H., and Araujo, C.A.P., Jpn. J. Appl. Phys. 34, 5240 (1995).CrossRefGoogle Scholar
14.Zhang, X., Gu, P., and Desu, S.B., Phys. Status Solidi A 35, 160 (1997).Google Scholar
15.Sung, Y-M., J. Mater. Res. 16, 2039 (2001).CrossRefGoogle Scholar
16.Kingery, W.D., Bowen, H.K., and Uhlman, D.R., Introduction to Ceramics, 2nd ed. (John Wiley & Sons, New York, 1976), p. 99.Google Scholar
17.Dietzel, A., Z. Electrochem. 48, 9 (1942).Google Scholar
18.Kwak, W-C. and Sung, Y-M. (2002, unpublished).Google Scholar