Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-07-01T19:23:04.986Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallization and in-plane alignment behavior of YBa2Cu3O7−y films on MgO(001) prepared by the dipping-pyrolysis process

Published online by Cambridge University Press:  03 March 2011

T. Manabe ,
I. Yamaguchi ,
S. Nakamura ,
W. Kondo ,
T. Kumagai  and
S. Mizuta
T. Manabe
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
I. Yamaguchi
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
S. Nakamura
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
W. Kondo
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
S. Mizuta
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

The effects of annealing temperature and oxygen partial pressure [p(O2)] were investigated on the crystallization and orientation of YBa2Cu3O7−y (YBCO) films on MgO(001) prepared by the dipping-pyrolysis process. The c-axis oriented films without in-plane alignment were prepared by annealing in the YBCO-unstable region, i.e., at low initial p(O2) of 10−4−10−3 atm and 950 °C followed by O2 treatment, through intermediate Y2BaCuO5 and liquid phase. In-plane aligned c- or c/a-axis films were prepared by similar heat treatment with an initial p(02) of 10−4 atm and 900–925 °C through a mixture of BaCu2O2 and YBa3Cu2O6+x. In contrast, nonoriented YBCO films were obtained by annealing at higher initial p(O2)'s and lower temperatures, i.e., by direct reaction among Y2O3, BaCO3, and CuO.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 7 , July 1995 , pp. 1635 - 1643
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Manabe, T., Kondo, W., Mizuta, S., and Kumagai, T., J. Mater. Res. 9, 858 (1994).CrossRefGoogle Scholar
2Kumagai, T., Yamasaki, H., Endo, K., Manabe, T., Niino, H., Tsunoda, T., Kondo, W., and Mizuta, S., Jpn. J. Appl. Phys. 32, L1602 (1993).CrossRefGoogle Scholar
3Ramesh, R., Hwang, D., Ravi, T. S., Inam, A., Barner, J. B., Nazar, L., Chan, S. W., Chen, C. Y., Dutta, B., Venkatesan, T., and Wu, X. D., Appl. Phys. Lett. 56, 2243 (1990).CrossRefGoogle Scholar
4Ravi, T. S., Hwang, D. M., Ramesh, R., Chan, S. W., Nazar, L., Chen, C. Y., Inam, A., and Venkatesan, T., Phys. Rev. B 42, 10141 (1990).CrossRefGoogle Scholar
5Lee, S. T., Chen, S., Hung, L. S., and Braunstein, G., Appl. Phys. Lett. 55, 286 (1989).CrossRefGoogle Scholar
6Merchant, N., Luo, J. S., Maroni, V. A., Gruen, D. M., Tani, B. S., Sinha, S., Sandhage, K. H., and Craven, C. A., J. Mater. Res. 7, 2680 (1992).CrossRefGoogle Scholar
7Mclntyre, P. C., Cima, M. J., Smith, J. A. Jr., Hallock, R. B., Siegal, M. P., and Phillips, J. M., J. Appl. Phys. 71, 1868 (1992).CrossRefGoogle Scholar
8Chu, P-Y., Campion, I., and Buchanan, R. C., J. Mater. Res. 8, 261 (1993).CrossRefGoogle Scholar
9Manabe, T., Arai, K., Kondo, W., Mizuta, S., and Kumagai, T., J. Mater. Res. 7, 2337 (1992).CrossRefGoogle Scholar
10Hammond, R. H. and Borman, R., Physica C 162–164, 703 (1989).Google Scholar
11Lindemer, T. B., Washburn, F. A., and Mac, C.S.Dougall, Physica C 196, 390 (1992).CrossRefGoogle Scholar
12Kumagai, T., Manabe, T., Kondo, W., Minamiue, H., and Mizuta, S., Jpn. J. Appl. Phys. 29, L940 (1990).CrossRefGoogle Scholar
13Manabe, T., Kondo, W., Mizuta, S., and Kumagai, T., Jpn. J. Appl. Phys. 30, L1000 (1991).CrossRefGoogle Scholar
14Eom, C. B., Marshall, A. F., Laderman, S. S., Jacowitz, R. D., and Geballe, T. H., Science 249, 1549 (1990).CrossRefGoogle Scholar
15Mukaida, M. and Miyazawa, S., J. Appl. Phys. 74, 1209 (1993).CrossRefGoogle Scholar
16Hellman, E. S., Schlom, D. G., Marshall, A. F., Streiffer, S. K., Harris, J. S. Jr., Beasley, M. R., Bravman, J. C., Geballe, T. H., Eckstein, J. N., and Webb, C., J. Mater. Res. 4, 476 (1989).CrossRefGoogle Scholar
17Cima, M. J., Flemings, M. C., Figueredo, A. M., Nakade, M., Ishii, H., Brody, H. D., and Haggerty, J. S., J. Appl. Phys. 72, 179 (1992).CrossRefGoogle Scholar
18Izumi, T., Nakamura, Y., and Shiohara, Y., J. Cryst. Growth 128, 757 (1993).CrossRefGoogle Scholar