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Correlation between Ni3Sn4 intermetallics and Ni3P due to solder reaction-assisted crystallization of electroless Ni–P metallization in advanced packages

Published online by Cambridge University Press:  31 January 2011

K. C. Hung ,
Y. C. Chan ,
C. W. Tang  and
H. C. Ong
K. C. Hung
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Tat chee Avenue, Kowloon, Hong Kong
Y. C. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Tat chee Avenue, Kowloon, Hong Kong
C. W. Tang
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Tat chee Avenue, Kowloon, Hong Kong
H. C. Ong
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Tat chee Avenue, Kowloon, Hong Kong
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Abstract

Ni3Sn4 intermetallic was formed by the depletion of Ni from electroless Ni–P, and a Ni3P layer was formed simultaneously due to solder reaction-assisted crystallization during solder reflow. Both Ni3Sn4 and Ni3P grew rapidly due to the solder reaction-assisted crystallization and their growth was diffusion controlled during the first 15 min of annealing at 220 °C. After that, the growth rate of Ni3Sn4 was greatly reduced and the crystallization of electroless Ni–P to Ni3P was no longer induced. Based on kinetic data and scanning electron microscope morphology observations, underlying mechanisms causing this specific phenomenon are proposed. This finding is indeed very crucial since we may control the growth of Ni–Sn intermetallics by monitoring the solder reaction-assisted crystallization of electroless Ni–P.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 11 , November 2000 , pp. 2534 - 2539
Copyright
Copyright © Materials Research Society 2000

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References

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