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Chemical–mechanical polishing of copper and tantalum with silica abrasives

Published online by Cambridge University Press:  31 January 2011

Y. Li ,
M. Hariharaputhiran  and
S. V. Babu
Y. Li
Affiliation:
Department of Mechanical Engineering, Clarkson University, Potsdam, New York 13699
M. Hariharaputhiran
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699
S. V. Babu
Affiliation:
Department of Chemical Engineering and Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699
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Abstract

Chemical mechanical polishing of copper and tantalum was performed using fumed amorphous silica abrasive particles dispersed in H2O2, Fe(NO3)3, and glycine solutions. Results showed that in DI water silica did not polish Cu but Ta had a relatively high polish rate. Cu polish rate decreased with increasing particle concentration in Fe(NO3)3-based slurries due to the adsorption of Fe3+ on the silica surface. Addition of H2O2 enhanced Cu polish rate but reduced Ta polish rate. The specific surface area of the particles played an important role in the removal of Ta and Cu, presumably due to some chemical bonding between the materials being polished and the silica particles.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 4 , April 2001 , pp. 1066 - 1073
Copyright
Copyright © Materials Research Society 2001

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