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Chemical solution deposited GaN films from oxygen- and nitrogen-based precursors

Published online by Cambridge University Press:  31 January 2011

David Kisailus ,
Joon Hwan Choi  and
F. F. Lange
David Kisailus
Affiliation:
Department of Materials Engineering, University of California, Santa Barbara, California 93106
Joon Hwan Choi
Affiliation:
Department of Materials Engineering, University of California, Santa Barbara, California 93106
F. F. Lange
Affiliation:
Department of Materials Engineering, University of California, Santa Barbara, California 93106
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Abstract

GaN films were produced by the chemical solution deposition method (CSD) using two different precursors—gallium dimethyl amide (GDA; containing gallium–nitrogen bonds) and gallium isopropoxide (GIP; containing gallium–oxygen bonds). Pyrolysis of the GDA film at 600 °C produced a continuous layer of GaN grains with a single orientational relation with the substrate [GaN (0001) ∥ Al2O3 (0001) and GaN (1010) ∥ Al2O3 (1120)], and an overlying polycrystalline film. At temperatures greater than 600 °C, the oriented grains consumed the polycrystalline layer via an evaporation–condensation mass transport. Pyrolysis of the GIP films at 600 °C produced a continuous layer of gallium oxynitride having the corundum structure [i.e., α–Ga2O(3−x)N2/3x] with an epitaxial relation to the substrate (α–Ga2O(3−x)N2/3x[0001] ∥ Al2O3 [0001] and α–Ga2O(3−x)N2/3x [1010] ∥ Al2O3 [1120]), and an overlaying polycrystalline gallium oxynitride film with a spinel structure. Increasing temperature caused growth of oriented grains in contact with the substrate and conversion of the oxynitride to wurtzite GaN at 800 °C. Room-temperature (300 K) and low-temperature(77 K) photoluminescence measurements behaved similarly to metal-organic chemical vapor deposition based GaN with additional photoluminescence most likely due to nitrogen vacancy impurities.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 10 , October 2002 , pp. 2540 - 2548
Copyright
Copyright © Materials Research Society 2002

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References

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