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Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria

Published online by Cambridge University Press:  31 January 2011

Seung-Ho Lee ,
Zhenyu Lu ,
S. V. Babu  and
Egon Matijević
Seung-Ho Lee
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699–5814
Zhenyu Lu
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699–5814
S. V. Babu
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699–5814
Egon Matijević
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699–5814
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Abstract

Thermal oxide covered silicon wafers were polished with slurries containing either nano-sized ceria (CeO2) or newly prepared uniform colloidal silica particles coated with ceria. The polish rate of the latter was significantly higher than that of pure ceria. The experiments were carried out using different concentrations of the abrasives at pH 4 and 10. Little effect on the polishing rates was noted when the conditions of the slurries were varied, which was explained by the compensation of two opposite polishing mechanisms.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 10 , October 2002 , pp. 2744 - 2749
Copyright
Copyright © Materials Research Society 2002

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