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Characterization of the ternary phase at the Sn/Ni–V joint

Published online by Cambridge University Press:  31 January 2011

Chih-chi Chen ,
Sinn-wen Chen  and
Chih-horng Chang
Chih-chi Chen*
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan, Republic of China; and Department of Chemical Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan
Sinn-wen Chen
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan, Republic of China
Chih-horng Chang
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: ccchenj@cycu.edu.tw
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Abstract

Ni–7 wt% V diffusion barrier is commonly used in flip chip technology, and Sn is the primary element of all commercial electronic solders. Different from the interfacial reactions in the Sn/Ni couples, a ternary T phase is formed in the Sn/Ni–7 wt% V couples reacted at temperatures lower than 350 °C. The T phase is a mixture of an amorphous phase and the Ni3Sn4 phase with grains about 50 nm in size. The amorphous phase is composed mainly of Sn and V atoms, and it is formed due to the fast diffusion of Sn and relative immobility of V. Activation energy of the T phase formation is 16.5 kJ/mol, which is approximately 50% of that of the Ni3Sn4 phase determined from the Sn/Ni interfacial reactions. The T phase is no longer formed and the reaction product is the Ni3Sn4 phase in the Sn/Ni–7 wt% V couples reacted at temperatures higher than 350 °C.

Keywords

AmorphousDiffusionPackaging
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 10 , October 2008 , pp. 2743 - 2748
Copyright
Copyright © Materials Research Society 2008

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