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Characterization of sputtered iridium dioxide thin films

Published online by Cambridge University Press:  31 January 2011

P. C. Liao ,
W. S. Ho ,
Y. S. Huang  and
K. K. Tiong
P. C. Liao
Affiliation:
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China
W. S. Ho
Affiliation:
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China
Y. S. Huang*
Affiliation:
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China
K. K. Tiong
Affiliation:
Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan, Republic of China
*
a) Author to whom correspondence should be addressed.
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Abstract

Iridium dioxide (IrO2) thin films, deposited on Si substrates by reactive rf sputtering method under various conditions, were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), electrical-conductivity, spectrophotometry, ellipsometry and Raman scattering measurements. The average grain sizes of the films were estimated by AFM. A grain boundary scattering model was used to fit the relation between the average grain size and electrical resistivity. The optical and dielectric constants were determined by the ellipsometry measurements. The results of the electrical and optical studies show a metallic character of the films deposited at higher temperatures. The results of XRD and Raman scattering indicate that the IrO2 films deposited at temperatures higher than 300 °C show the presence of (200) texture.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 5 , May 1998 , pp. 1318 - 1326
Copyright
Copyright © Materials Research Society 1998

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