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Characteristics of titanium oxide films deposited by an activated reactive evaporation method

Published online by Cambridge University Press:  03 March 2011

Tatsuo Fujii ,
Naoki Sakata ,
Jun Takada ,
Yoshinari Miura ,
Yoshihiro Daitoh  and
Mikio Takano
Tatsuo Fujii
Affiliation:
Department of Applied Chemistry, Okayama University, Tsushima-naka, Okayama 700, Japan
Naoki Sakata
Affiliation:
Department of Applied Chemistry, Okayama University, Tsushima-naka, Okayama 700, Japan
Jun Takada
Affiliation:
Department of Applied Chemistry, Okayama University, Tsushima-naka, Okayama 700, Japan
Yoshinari Miura
Affiliation:
Department of Applied Chemistry, Okayama University, Tsushima-naka, Okayama 700, Japan
Yoshihiro Daitoh
Affiliation:
Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611, Japan
Mikio Takano
Affiliation:
Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611, Japan
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Abstract

Titanium di- and sesquioxide films were epitaxially grown on the (001) surface of sapphire single-crystalline substrates by an activated reactive evaporation method. Formation range for each titanium oxide was determined as a function of oxygen pressure (Po2) by means of x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films prepared at Po2 ≥ 2.0 × 10−4 Torr were stoichiometric (100)-oriented rutile of TiO2, and with decreasing Po2 they would accommodate more and more Ti3+ ions in the rutile structure. At Po2 = 0.6 × 10−4 Torr, on the other hand, (001)-oriented Ti2O3 was formed and an electrical transition was clearly detected at about 400 K. However, the large lattice mismatch between the substrate and these films leads to a periodic introduction of misfit dislocations in the case of the TiO2 films and a mixing of stacking sequences for the Ti2O3 films.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 6 , June 1994 , pp. 1468 - 1473
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Goto, K. S., Solid State Electrochemistry and Its Applications to Sensors and Electronic Devices (Elsevier, New York, 1988), p. 1.Google Scholar
2Bauer, E. G., Dodson, B. W., Ehrlich, D. J., Feldman, L. C., Flynn, C. P., Geis, M. W., Harbison, J. P., Matyi, R. J., Peercy, P. S., Petroff, P. M., Phillips, J. M., Stringfellow, G. B., and Zangwill, A., J. Mater. Res. 5, 852 (1990).CrossRefGoogle Scholar
3Cronemeyer, D. C., Phys. Rev. 113, 1222 (1959).CrossRefGoogle Scholar
4Xu, W. W., Kershaw, R., Dwight, K., and Wold, A., Mater. Res. Bull. XXV, 1385 (1990).CrossRefGoogle Scholar
5Gao, Y., Merkle, K. L., Chang, H. L. M., Zhang, T. J., and Lam, D. J., Philos. Mag. A 65, 1103 (1992).CrossRefGoogle Scholar
6Wicaksana, D., Kobayashi, A., and Kinbara, A., J. Vac. Sci. Technol. A 10, 1479 (1992).CrossRefGoogle Scholar
7Honig, J. M. and Reed, T. B., Phys. Rev. 174, 1020 (1968).CrossRefGoogle Scholar
8Nemanich, R. J., Tsai, C. C., and Connell, G. A. N., Phys. Rev. Lett. 44, 273 (1980).CrossRefGoogle Scholar
9Wahlbeck, P. G. and Gilles, P. W., J. Am. Ceram. Soc. 49, 181 (1966).CrossRefGoogle Scholar
10Terashima, T., Iijima, K., Yamamoto, K., Takada, J., Hirata, K., Mazaki, H., and Bando, Y., J. Cryst. Growth 95, 617 (1989).CrossRefGoogle Scholar
11Iijima, K., Terashima, T., Yamamoto, K., Hirata, H., and Bando, Y., Appl. Phys. Lett. 56, 527 (1989).CrossRefGoogle Scholar
12Duffy, J. A., Bonding, Energy Levels and Bands in Inorganic Solids (Longman, London, 1990), p. 45.Google Scholar
13Porto, S. P. S., Fleury, P. A., and Damen, T. C., Phys. Rev. 154, 522 (1967).CrossRefGoogle Scholar
14Shin, S. H., Aggarwal, R. L., Lax, B., and Honig, J. M., Phys. Rev. B 9, 583 (1974).CrossRefGoogle Scholar
15Wells, A. F., Structural Inorganic Chemistry, 5th ed. (Oxford, New York, 1984), p. 141.Google Scholar
16Mott, N. F., Metal-Insulator Transitions, 2nd ed. (Taylor & Francis, London, 1990), p. 171.Google Scholar