Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-19T23:42:19.713Z Has data issue: false hasContentIssue false

Analysis of the Reservoir Length and its Effect on Electromigration Lifetime

Published online by Cambridge University Press:  31 January 2011

H.A. Le
Affiliation:
Materials Science and Engineering Department, The University of Texas at Arlington, P.O. Box 19016, Arlington, Texas 76006
Larry Ting
Affiliation:
Dallas Reliability –413, 5200 NE Elam Young Parkway, Hillsboro, Oregon 97124–6497
N.C. Tso
Affiliation:
Intel Corporation, M.S. RA2-413, 5200 NE Elam Young Parkway, Hillsboro, Oregon 97124-6497
C-U. Kim
Affiliation:
Materials Science and Engineering Department, The University of Texas at Arlington, P.O. Box 19016, Arlington, Texas 76006
Get access

Abstract

This report studies the electromigration performance of W-plug via structures under the reservoir effect. The lifetime improvement factor M was observed to be a weak function of the stressing current and approximately equal to 2. A Simple model is included in the report to explain this observation. The model also predicts the most effective reservoir length for electromigration lifetime improvement.

Type
Articles
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Hu, C-K., Rosenberg, R., and Tu, K.N., in Stress-Induced Phenomena in Metallization, Proc. 2nd Int. Workshop, edited by Ho, P., Li, C.Y., and Totta, P. (Am. Inst. Phys., New York, 1994), p. 195.Google Scholar
Rathore, H.S., Filippi, R.G., Estabil, R.A., Wachnik, J.J., and Kwok, T., in Stress-Induced Phenomena in Metallization, Proc. 2nd Int. Workshop, edited by Ho, P., Li, C.Y., and Totta, P. (Am. Inst. Phys., New York, 1994), p. 165.Google Scholar
Hu, C-K., Small, M.B., and Ho, P.S., J. Appl. Phys. 74, 969 (1993).CrossRefGoogle Scholar
Fujii, M., Koyama, K., and Aoyama, J., Conf. Proc. VLSI Multilevel Integr. Circuit (VMIC) 312 (1997).Google Scholar
Le, H.A., Tso, N.C., and McPherson, J.W.. J. Electrochem. Soc. 2522 (1997).Google Scholar
Blech, I.A. and Meieran, E.S., J. Appl. Phys. 40, 485 (1969).Google Scholar
Blech, I.A. and Herring, C., Appl. Phys. Let. 29, 131 (1976).Google Scholar
Blech, I.A., J. Appl. Phys. 47, 1203 (1976).Google Scholar
Le, H.A., Banerjee, K., and McPherson, J.W., Semicond. Sci. Technol. 11, 858 (1996).Google Scholar
Filippi, R.G., Biery, G.A., and Wachnik, R.A., J. Appl. Phys. 78(6), 3759 (1995).CrossRefGoogle Scholar
Kraayeveld, J.R., Verbruggen, A.H., and Willemsen, A.W-J., Appl. Phys. Lett. 67(9), 1227 (1995).Google Scholar
Gall, M., Jawarani, D., and Kawasaki, H., in Materials Reliability in Microelectronics VI, edited by Filter, W.F., Clement, J.J., Oates, A.S., Rosenberg, R., and Lenahan, P.M. (Mater. Res. Soc. Symp. Proc. 428, Pittsburgh, PA, 1996), p. 81.Google Scholar
Bui, N.D., in Materials Reliability in Microelectronics VI, edited by Filter, W.F., Clement, J.J., Oates, A.S., Rosenberg, R., and Lenahan, P.M. (Mater. Res. Symp. Proc. 428, Pittsburgh, PA, 1996), p. 87.Google Scholar